MMBD4448W datasheet, PDF - EEWORLD Datasheet

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MMBD4448W: Descriptionswitching diode; CategoryDiscrete semiconductor; File Size2MB，1 Pages; ManufacturerJCET; Websitehttp://www.cj-elec.com/; Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

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MMBD4448W Overview

switching diode

Features

Product Name: Switching Diode

Product model: MMBD4448W

product features:

Fast switching speed

Surface mount package ideally suited for automatic insertion

For general purpose switching applications

High conductance

Product parameters:

Pd power dissipation: 200mW

Io rectified current: 250mA

VR reverse working voltage: 75V

VF forward buck: 1.25V

IR reverse current: 2.5uA

Trr Forward recovery time: 4ns

Package: SOT-323

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-323 Plastic-Encapsulate Diodes

MMBD4448W

SOT-323

SWITCHING DIODE

FEATURES

Fast switching speed

Surface mount package ideally suited for automatic insertion

For general purpose switching applications

High conductance

MARKING: KA3

Maximum Ratings @Ta=25℃

Parameter

Non-Repetitive Peak

Reverse Voltage

Peak Repetitive Peak

Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RMS Reverse Voltage

Forward Continuous Current

Average Rectified Output Current

Peak

Forward Surge Current

@t=1.0μs

@t =1.0s

Power Dissipation

Thermal Resistance Junction to

Ambient

Storage

Temperature

Symbol

RRM

RWM

R(RMS)

FSM

θJA

STG

500

250

4.0

1.5

200

625

-55

+150

Limit

100

Unit

℃/W

℃

Electrical Ratings @Ta=25℃

Parameter

Symbol

Forward voltage

Reverse current

Capacitance between terminals

Reverse

recovery time

Min

0.62

Typ

Max

0.72

0.855

1.0

1.25

2.5

Unit

μA

Conditions

=5mA

=10mA

=100mA

=150mA

=75V

=20V

=0V,f=1MHz

=10mA

Irr=0.1XI

=100Ω

A,May,2011

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