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MMBD4448TGT/R7

Description
Rectifier Diode,
CategoryDiscrete semiconductor    diode   
File Size104KB,3 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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MMBD4448TGT/R7 Overview

Rectifier Diode,

MMBD4448TGT/R7 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPANJIT
Reach Compliance Codecompliant
ECCN codeEAR99

MMBD4448TGT/R7 Preview

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MMBD4448TG
SURFACE MOUNT SWITCHING DIODES
VOLTAGE
FEATURES
• Fast switching Speed.
• Electrically ldentical to Standerd JEDEC
• High Conductance
• Surface Mount Package ldeally Suited for Automatic lnsertion.
• In compliance with EU RoHS 2002/95/EC directives
100 Volts
POWER
200mWatts
MECHANICAL DATA
Case: SOD-723 plastic case.
Terminals : Solderable per MIL-STD-750,Method 2026
Weight: approximately 0.00077gram
Polarity : Color band cathode
Marking : BJ
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
J
=25°C unless otherwise noted)
PARAMETER
Reverse Voltage
Peak Reverse Voltage
RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current at Ta=25
O
C
Peak Forward Surge Current, 0.001ms
Power Dissipation Derate Above 25
O
C
Maximum Forward Voltage
Maximum DC Reverse Current at Rated DC Blocking Voltage
T
J
= 25
O
C
Junction Capacitance( Notes1)
Maximum Reverse Recovery (Notes2)
Typical Thermal Resistance
Junction and Storage Temperature Range
SYMBOL
V
R
V
RM
V
RMS
V
DC
I
F(AV)
I
FS M
P
TOT
V
F
I
R
C
J
T
RR
R
θ
JA
T
J
MMBD4448TG
75
100
50
75
150
4
200
0.72 / 5mA
1.0 / 100mA
2.5@75V
4.0
4.0
625
-55 to +150
UNITS
V
V
V
V
mA
A
mW
V
uA
pF
ns
O
C/W
O
C
NOTE:
1. CJ at V
R
=0, f=1MHZ
2.From I
F
=10mA to I
R
=1mA, V
R
=6Volts, R
L
=100Ω
1
2
Cathode
Anode
REV.0.1-FEB.9.2009
PAGE . 1
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