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MMBD3004BRM

Description
0.225 A, 350 V, 4 ELEMENT, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size133KB,3 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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MMBD3004BRM Overview

0.225 A, 350 V, 4 ELEMENT, SILICON, SIGNAL DIODE

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MMBD3004BRM
SURFACE MOUNT HIGH VOLTAGE SWITCHING DIODE ARRAY
This device features two series-connected diode pairs which can be
connected to form a full-wave bridge. It is housed in a very small SOT23-6L
surface mount package.
SOT23-6L
FEATURES
High Reverse Voltage Rating
Fast Switching Speed
Low Capacitance
100% Matte Tin Finish (LEAD-FREE PRODUCT)
4
5
6
2
1
3
APPLICATIONS
Power Supplies
High Speed Rectification
6
5
4
1
Marking Code: 304
2
3
MAXIMUM RATINGS (Per Diode)
T
J
= 25°C Unless otherwise noted
Rating
Repetitive Peak Reverse Voltage
Continuous Reverse Voltage
RMS Reverse Voltage
Continuous Forward Current (Note 1)
Peak Repetitive Forward Current (Note 1)
Non-repetitive Peak Forward Current, t = 1sec, Square Wave
Total Power Dissipation (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
Symbol
V
RRM
V
R
V
RMS
I
F
I
FRM
I
FSM
P
tot
T
J
T
stg
Value
350
300
212
225
625
1.0
350
-55 to +150
-55 to +150
Units
V
V
V
mA
mA
A
mW
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient (Note 1)
Note 1. FR-5 Board 1.0 x 0.75 x 0.062 in.
Symbol
R
thja
Value
357
Units
°C/W
12/7/2005
Page 1
www.panjit.com
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