MJE13003 datasheet, PDF - EEWORLD Datasheet

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MJE13003: Description1.5 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB; Categorysemiconductor Discrete semiconductor; File Size162KB，1 Pages; ManufacturerNanjing International Group Co.,Ltd

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MJE13003 Overview

1.5 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB

1.5 A, 400 V, NPN, 硅, 功率晶体管, TO-220AB

MJE13003 Parametric

Parameter Name	Attribute value
Number of terminals	3
Transistor polarity	NPN
Maximum collector current	1.5 A
Maximum Collector-Emitter Voltage	400 V
Processing package description	Plastic, TO-220, 3 PIN
state	DISCONTINUED
packaging shape	Rectangle
Package Size	Flange mounting
Terminal form	THROUGH-hole
terminal coating	tin lead
Terminal location	single
Packaging Materials	Plastic/Epoxy
structure	single
Number of components	1
Transistor component materials	silicon
Transistor type	universal power supply
Minimum DC amplification factor	8
Rated crossover frequency	5 MHz

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DONGGUAN NANJING ELECTRONICS LTD.,

TO-126 Plastic-Encapsulate Transistors

MJE13003

TO-126

TRANSISTOR (NPN)

FEATURES

Power Switching Applications

MAXIMUM RATINGS (T

=25℃ unless otherwise noted)

Symbol

CBO

CEO

EBO

θJA

stg

1 . BASE

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Thermal Resistance from Junction to Ambient

Junction Temperature

Storage Temperature

Value

600

400

1.25

100

150

-55~+150

Unit

℃/W

℃

2. COLLECTOR

3. EMITTER

ELECTRICAL CHARACTERISTICS (T

=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Fall time

Storage time

Symbol

(BR)CBO

(BR)CEO

(BR)EBO

CBO

CEO

EBO

FE(1)

FE(2)

CE(sat)1

BE(sat)

Test

conditions

Min

600

400

100

0.5

1.1

0.5

MHz

μs

Typ

Max

Unit

= 0.1mA,I

= 1mA,I

=0.1mA,I

=600V,I

=400V,I

=7V,I

=10V, I

=200mA

=10V, I

=250μA

=200mA,I

=40mA

=200mA,I

=40mA

=10V, I

=100mA,f=1MHz

=100mA

CLASSIFICATION of h

FE(1)

Range

9-15

15-20

20-25

25-30

30-35

35-40

CLASSIFICATION of

Rank

Range

2-2.5

2.5-3

3-3.5

3.5-4

A,Apr,2012

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