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MCR100-4

Description
0.8 A, 400 V, SCR, TO-226AA
Categoryaccessories   
File Size50KB,3 Pages
ManufacturerNanjing International Group Co.,Ltd
Download Datasheet Parametric View All

MCR100-4 Overview

0.8 A, 400 V, SCR, TO-226AA

0.8 A, 400 V, 可控硅整流器, TO-226AA

MCR100-4 Parametric

Parameter NameAttribute value
Maximum DC trigger current0.0500 mA
Number of terminals3
Processing package descriptionLEAD FREE, PLASTIC, TO-92, 3 PIN
each_compliYes
EU RoHS regulationsYes
stateActive
Trigger typeSCR
structureSINGLE
jedec_95_codeTO-226AA
jesd_30_codeR-PBCY-T3
moisture_sensitivity_levelNOT SPECIFIED
Number of components1
Minimum operating temperature-40 Cel
Maximum operating temperature110 Cel
Packaging MaterialsPLASTIC/EPOXY
packaging shapeRECTANGULAR
Package SizeCYLINDRICAL
eak_reflow_temperature__cel_255
qualification_statusCOMMERCIAL
Off-state repetitive peak voltage400 V
Reverse repetitive peak voltage400 V
Effective maximum current0.8000 A
surface mountNO
terminal coatingNOT SPECIFIED
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
ime_peak_reflow_temperature_max__s_NOT SPECIFIED
dditional_featureSENSITIVE GATE

MCR100-4 Preview

Download Datasheet
MCR100-3 … MCR100-8
G
A
K
TO-92 Plastic Package
Weight approx. 0.19g
MAXIMUM RATINGS (T
J
=25°C unless otherwise noted.)
Rating
Peak Repetitive Forward and Reverse Blocking
Voltage, Note 1
(T
J
=25 to 125°C, R
GK
=1KΩ)
MCR100-3
MCR100-4
MCR100-5
MCR100-6
MCR100-7
MCR100-8
Forward Current RMS
(All Conduction Angles)
Peak Forward Surge Current, T
A=
25°C
(1/2 Cycle, Sine Wave, 60Hz)
Circuit Fusing (t=8.3ms)
Peak Gate Power - Forward, T
A
=25°C
Average Gate Power - Forward, T
A
=25°C
Peak Gate Current - Forward, T
A
=25°C
(300μs,120PPS)
Peak Gate Voltage - Reverse
Operating Junction Temperature Range @ Rated V
RRM
and V
DRM
Storage Temperature Range
I
T(RMS)
I
TSM
It
P
GM
P
GF(AV)
I
GFM
V
GRM
T
J
T
s
2
Symbol
Value
100
Unit
V
DRM
and
V
RRM
200
300
400
500
600
0.8
10
0.415
0.1
0.01
1
5
-40 to +125
-40 to +150
Amps
Amps
As
Watts
Watt
Amp
Volts
°C
°C
2
Volts
Note 1. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied
concurrent with negative potential on the anode.
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