MBTA05 datasheet, PDF - EEWORLD Datasheet

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MBTA05: Description500 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR; Categorysemiconductor Discrete semiconductor; File Size192KB，5 Pages; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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MBTA05 Overview

500 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR

500 mA, 60 V, NPN, 硅, 小信号晶体管

MBTA05 Parametric

Parameter Name	Attribute value
Number of terminals	3
Transistor polarity	NPN
Maximum collector current	0.5000 A
Maximum Collector-Emitter Voltage	60 V
Processing package description	SOT-23, 3 PIN
state	ACTIVE
packaging shape	RECTANGULAR
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	GULL WING
Terminal location	DUAL
Packaging Materials	PLASTIC/EPOXY
structure	SINGLE
Number of components	1
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Transistor type	GENERAL PURPOSE SMALL SIGNAL
Minimum DC amplification factor	100
Rated crossover frequency	80 MHz

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MMBTA05,MMBTA06,MMBTA55,MMBTA56

NPN AND PNP HIGH VOLTAGE TRANSISTOR

VOLTAGE

60~80 Volts

FEATURES

• NPN and PNP silicon, planar design

• Collector current I

= 100mA

•

In compliance with EU RoHS 2002/95/EC directives

POWER

225 mWatts

MECHANICAL DATA

• Case: SOT-23, Plastic

• Terminals: Solderable per MIL-STD-750, Method 2026

• Approx. Weight: 0.008 gram

• Marking :

M M B TA 0 5 = B 0 5

M M B TA 0 6 = B 0 6

M M B TA 5 5 = B 5 5

M M B TA 5 6 = B 5 6

MAXIMUM RATINGS

PA RA M E TE R

C o lle c to r-E mi tte r Vo lta g e

C o lle c to r-B a s e Vo lta g e

E mi tte r-B a s e Vo lta g e

C o l l e c t o r C ur r e nt - C o nt i nuo us

C i r c ui t F i g ur e

S YM B O L

CEO

CBO

EBO

NP N

P NP

M M B TA 0 5 M M B TA 5 5 M M B TA 0 6 M M B TA 5 6 U N I T S

4 .0

500

NP N

P NP

THERMAL CHARACTERISTICS

CHARACTERISTIC

Total Device Dissipation FR-5 Board (Note 1)T

=25

Derate above 25

Thermal Resistance , Junction to Ambient

Total Device Dissipation Alumina Substrate (Note 2)T

=25

Derate above 25

Thermal Resistance , Junction to Ambient

Junction and Storage Temperature

SYMBOL

Rθ

STG

MAX

225

1.8

556

300

2.4

417

-55 to 150

PNP

UNIT

mW/

C/W

mW/

NPN

1.FR-4=70 x

1mm.

2.Alumina=0.4 x 0.3 x 0.024 in. 99.5 alumina

STAD-NOV.30.2005

PAGE . 1

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