MBR880CT datasheet, PDF - EEWORLD Datasheet

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MBR880CT: DescriptionSchottky diodes; CategoryDiscrete semiconductor diode; File Size70KB，2 Pages; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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MBR880CT Overview

Schottky diodes

Features

Product Name: Schottky Diode

Product model: MBR880CT

parameter:

Repetitive reverse voltage peak Vrrm: 80V

Maximum average rectified current Io: 8A

Maximum forward surge current I FSM: 150A

Forward voltage drop VF: 0.8V when IF=4A

Maximum feedback current IR: 50uA when VR=80V

Package: TO-220AB

MBR880CT Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	PANJIT
Parts packaging code	TO-220AB
package instruction	R-PSFM-T3
Contacts	3
Reach Compliance Code	_compli
ECCN code	EAR99
Other features	FREE WHEELING DIODE, LOW POWER LOSS
application	EFFICIENCY
Configuration	COMMON CATHODE, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Maximum non-repetitive peak forward current	150 A
Number of components	2
Phase	1
Number of terminals	3
Maximum operating temperature	175 °C
Minimum operating temperature	-65 °C
Maximum output current	8 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	80 V
surface mount	NO
technology	SCHOTTKY
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED

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MBR840CT~MBR8200CT

SCHOTTKY BARRIER RECTIFIER

VOLTAGE

FEATURES

• Plastic package has Underwriters Laboratory

Flammability Classification 94V-O utilizing

Flame Retardant Epoxy Molding Compound.

• Exceeds environmental standards of MIL-S-19500/228

• Low power loss, high efficiency.

• Low forwrd voltge, high current capability

• High surge capacity.

• For use in low voltage,high frequency inverters

free wheeling , and polarlity protection applications.

.058(1.47)

40 to 200 Volts

CURRENT

8 Ampere

• In compliance with EU RoHS 2002/95/EC directives

.042(1.07)

MECHANICALDATA

• Case: TO-220AB molded plastic package

• Terminals: Lead solderable per MIL-STD-750, Method 2026

• Polarity: As marked.

• Mounting Position: Any

• Weight: 0.0655 ounces, 1.859 grams.

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified. Resistive or inductive load.

PA RA M E TE R

M a xi m um R e c ur r e nt P e a k R e ve r s e V o l t a g e

M a xi m um R M S V o l t a g e

M a xi m um D C B l o c k i ng V o l t a g e

M a xi m um A ve r a g e F o r w a r d ( S e e F i g ur e 1 )

P e a k F o r w a r d S ur g e C ur r e nt : 8 . 3 m s s i ng l e ha l f s i ne -

w a ve s up e r i m p o s e d o n r a t e d l o a d ( J E D E C m e t ho d )

M a xi m um F o r w a r d V o l t a g e a t 4 . 0 A

M a xi m um D C R e ve r s e C ur r e nt T

= 2 5

a t R a t e d D C B l o c k i ng V o l t a g e T

= 1 0 0

Ty p i c a l T h e r m a l R e s i s t a n c e

O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e

S YM B O L

RRM

RMS

F ( A V )

F S M

J C

, T

S TG

MB R8 4 0 C T MB R8 4 5 C T MB R8 5 0 C T MB R8 6 0 C T MB R8 8 0 C T MB R8 9 0 C T MB R8 1 0 0 C T MB R8 1 5 0 C T MB R8 2 0 0 C T

U N IT S

31.5

150

100

150

105

150

200

140

200

0 .7 0

0 .7 5

0 .0 5

0 .8 0

0.90

C / W

-5 5 to +1 5 0

-6 5 to +1 7 5

NOTES : Both Bonding and Chip structure are available.

STAD-APR.30.2009

PAGE . 1

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