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MBR590

Description
Schottky diodes
CategoryDiscrete semiconductor    diode   
File Size103KB,2 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

Download Datasheet Parametric View All

MBR590 Overview

Schottky diodes

Features

Product Name: Schottky Diode


Product model: MBR590


parameter:


Repetitive reverse voltage peak Vrrm: 90V


Maximum average rectified current Io: 5A


Maximum forward surge current I FSM: 150A


Forward voltage drop VF: 0.8V when IF=5A


Maximum feedback current IR: 50uA when VR=90V


Package: DO-201AD


MBR590 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPANJIT
Parts packaging codeDO-201AD
package instructionROHS COMPLIANT, PLASTIC PACKAGE-2
Contacts2
Reach Compliance Code_compli
ECCN codeEAR99
Other featuresFREE WHEELING DIODE, LOW POWER LOSS
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-201AD
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current150 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current5 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage90 V
surface mountNO
technologySCHOTTKY
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED

MBR590 Preview

Download Datasheet
MBR540 SERIES
SCHOTTKY BARRIER RECTIFIERS
VOLTAGE
FEATURES
• Epitaxial Construction
• Guard Ring Die Construction for Transient Protection
• Low Power Loss, High Efficiency
• High Surge Capability
• High Current Capability and Low Forward Voltage Drop
• Surge Overload Rating to 150A Peak
• For Use in Low Voltage,High Frequency Inverters ,Free Wheeling ,
and Polarity Protection Applications .
• In compliance with EU RoHS 2002/95/EC directives
0.375(9.5)
0.285(7.2)
1.0(25.4)MIN.
0.052(1.3)
0.048(1.2)
40 to 200 Volts
CURRENT
5 Amperes
• Case: DO-201AD Molded plastic
• Terminals: Axial leads, solderable per MIL-STD-750,Method 2026
• Polarity: Color band denotes cathode
• Mounting Position: Any
• Weight: 0.0395 ounces, 1.122 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
PA RA ME TE R
Ma xi mum Re c ur re nt P e a k Re ve r se Vo ltag e
Ma xi mum RMS Vo lta g e
Ma xi mum D C B lo c ki ng Vo lta g e
A ve ra g e Re cti fi e d Outp ut C ur re nt (S e e F i g ur e 1 )
Non-Rep e ti ti ve P e a k F o rwa rd S urg e C urre nt : 8 .3 ms s i ngle
ha lf s i ne - wa ve s up e ri mpo s e d o n ra te d lo a d
F o rwa rd Vo lta g e a t 5 .0 A (No te s 3 )
P ea k Re ve rs e C ur re nt a t Ra te d D C B lo ck i ng
Vo lta g e
Typ i ca l The rma l Re s i sta nc e (No te s 2 )
( No te s 1 )
( No te s 1 )
Op e ra ti ng J unc ti o n a nd S to ra g e Te mp e r ature Ra ng e
T
J
=2 5
O
C
T
J
=1 0 0
O
C
S YMB OL
V
RR M
V
RMS
V
DC
I
F (AV )
I
F S M
V
F
I
R
R
θJ
A
R
θJ
L
R
θ
JC
T
J
,T
S TG
1.0(25.4)MIN.
MECHANICAL DATA
0.210(5.3)
0.188(4.8)
M B R54 0
MB R5 4 5 M B R55 0 MB R5 60 MB R5 8 0 MB R5 90 MB R5 1 00 MB R5 1 5 0 M B R5 2 0 0
UNITS
V
V
V
A
A
40
28
40
45
3 1 .5
45
50
35
50
60
42
60
80
56
80
5 .0
150
90
63
90
1 00
70
1 00
150
105
150
200
1 40
200
0 .7 0
0 .7 4
0 .0 5
10
50
15
12
0 .8 0
0.9
V
mA
O
C / W
-5 5 to +15 0
- 6 5 to +1 5 0
O
C
NOTES:
1. Measured at ambient temperature at a distance of 9.5mm from the case
2. Minimum Pad Area
3. Pulse test : 300μs pulse width, 1% duty cycle
August 17,2010-REV.01
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