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MBR5150_AY_10001

Description
DC reverse withstand voltage (Vr): 150V Average rectified current (Io): 5A Forward voltage drop (Vf): 900mV @ 5A
CategoryDiscrete semiconductor    diode   
File Size250KB,5 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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MBR5150_AY_10001 Overview

DC reverse withstand voltage (Vr): 150V Average rectified current (Io): 5A Forward voltage drop (Vf): 900mV @ 5A

MBR5150_AY_10001 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPANJIT
Reach Compliance Codenot_compliant
ECCN codeEAR99
Other featuresFREE WHEELING DIODE, LOW POWER LOSS
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.9 V
JEDEC-95 codeDO-201AD
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current150 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current5 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation2.5 W
Maximum repetitive peak reverse voltage150 V
Maximum reverse current50 µA
surface mountNO
technologySCHOTTKY
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED

MBR5150_AY_10001 Preview

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MBR540 SERIES
SCHOTTKY BARRIER RECTIFIERS
VOLTAGE
FEATURES
• Epitaxial Construction
• Guard Ring Die Construction for Transient Protection
• Low Power Loss, High Efficiency
• High Surge Capability
• High Current Capability and Low Forward Voltage Drop
• Surge Overload Rating to 150A Peak
and Polarity Protection Applications
• Lead free in compliance with EU RoHS 2011/65/EU directive
0.375(9.5)
0.285(7.2)
1.0(25.4)MIN.
0.052(1.3)
0.048(1.2)
40 to 200 Volt
CURRENT
5 Ampere
• For Use in Low Voltage, High Frequency Inverters, Free Wheeling,
MECHANICAL DATA
• Case: DO-201AD Molded plastic
• Terminals: Axial leads, solderable per MIL-STD-750,Method 2026
• Polarity: Color band denotes cathode
• Weight: 0.0402 ounces, 1.142 grams
1.0(25.4)MIN.
0.210(5.3)
0.188(4.8)
1
2
Cathode
Anode
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
PARA M ET ER
M a ximum Re cur r e nt Peak Re ve r s e Vo lt age
M a ximum RM S Vo lt age
M a ximum DC Bloc king Vo lt age
Ave r a g e Re c t i f ie d O ut p ut Cur r e nt ( Se e F ig ur e 1 )
No n- Re p e t it ive P e a k Fo r w a r d Sur g e Cur r e nt : 8 . 3 ms s ing le
ha lf sine - w ave super impos ed on r a t e d load
Po w e r Diss ipat io n
F o r w a r d Vo lt a g e a t 5 A ( No t e s 3 )
T
J
= 2 5
O
C
M a ximum DC Re ve r se Cur r e nt a t Ra t e d DC
Blo c k ing Vo lt a g e ( No t e s 4 )
T
J
= 1 0 0
O
C
T
J
= 1 2 5
O
C
Typical Ther ma l Re s is t ance ( Not es 2)
( Not es 1)
( Not es 1)
Typical Junc t ion Capa cit a nc e ( V
R
= 4 V, f = 1 M Hz)
O per at ing Junc t ion a nd St o r a g e Te mp e r a t ur e Ra ng e
NOTES :
SY M BO L
V
RRM
V
RM S
V
DC
I
F( AV)
I
FSM
P
D
V
F
M BR54 0
M BR54 5 M BR55 0 M BR560 M BR580 M BR590 M BR5 100 M BR5 150 M BR5200
UNI T S
V
V
V
A
A
W
40
28
40
45
31. 5
45
50
35
50
60
42
60
80
56
80
5
150
2.5
90
63
90
100
70
100
150
105
150
200
140
200
0. 7
0. 74
0.05
0.8
0.9
V
mA
I
R
10
-
5
50
15
12
1
O
mA
mA
C / W
pF
O
-
R
θJA
R
θJ
L
R
θJC
C
J
T
J
, T
STG
- 55 t o + 1 50
250
-65 to +150
150
C
1. Measured at ambient temperature at a distance of 9.5mm from the case
2. Minimum Pad Area
3. Pulse test : 300μs pulse width, 1% duty cycle
4.Short duration pulse test used to minimize self-heating effect.
September 30,2016-REV.04
PAGE . 1
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