MBR40150PT datasheet, PDF - EEWORLD Datasheet

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MBR40150PT: DescriptionSchottky diodes; CategoryDiscrete semiconductor diode; File Size52KB，2 Pages; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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MBR40150PT Overview

Schottky diodes

Features

Product Name: Schottky Diode

Product model: MBR40150PT

parameter:

Repetitive reverse voltage peak Vrrm: 150V

Maximum average rectified current Io: 40A

Maximum forward surge current I FSM: 350A

Forward voltage drop VF: 0.9V when IF=20A

Maximum feedback current IR: 50uA when VR=150V

Package: TO-3P/TO-247AD

MBR40150PT Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	PANJIT
Parts packaging code	TO-247AD
package instruction	ROHS COMPLIANT, PLASTIC, TO-3P, 3 PIN
Contacts	2
Reach Compliance Code	_compli
ECCN code	EAR99
Other features	FREE WHEELING DIODE, LOW POWER LOSS
application	EFFICIENCY
Configuration	COMMON CATHODE, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JEDEC-95 code	TO-247AD
JESD-30 code	R-PSFM-T3
Maximum non-repetitive peak forward current	350 A
Number of components	2
Phase	1
Number of terminals	3
Maximum operating temperature	175 °C
Minimum operating temperature	-65 °C
Maximum output current	40 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum repetitive peak reverse voltage	150 V
surface mount	NO
technology	SCHOTTKY
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED

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MBR4040PT SERIES

SCHOTTKY BARRIER RECTIFIERS

VOLTAGE

40 to 200 Volts

CURRENT

FEATURES

• Plastic package has Underwriters Laboratory

Flammability Classification 94V-O.

Flame Retardant Epoxy Molding Compound.

0.600(15.25)

0.580(14.75)

0.142(3.60)

0.125(3.20)

0.640(16.25)

0.620(15.75)

0.199(5.05)

0.175(4.45)

40 Amperes

• Metal silicon junction, majority carrier conduction

• Low power loss, high efficiency.

• High current capability

• Guardring for overvoltage protection

• For use in low voltage,high frequency inverters

free wheeling, and polarlity protection applications.

• Lead free in comply with EU RoHS 2002/95/EC directives.

0.087(2.20)

0.070(1.80)

0.126(3.20)

0.110(2.80)

0.050(1.25)

0.045(1.15)

0.839(21.30)

0.819(20.80)

0.095(2.40)

0.170(4.30)

0.145(3.70)

0.798(20.25)

0.777(19.75)

0.030(0.75)

0.017(0.45)

MECHANICAL DATA

• Case: TO-247AD/TO-3P molded plastic

• Terminals: solder plated, solderable per MIL-STD-750, Method 2026

• Polarity: As marked.

• Mounting Position: Any

• Weight: 0.224 ounce, 6.367 gram

0.225(5.70)

0.204(5.20)

0.225(5.70)

0.204(5.20)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

PA RA ME TE R

Maxi mum Recurrent P ea k Reverse Voltag e

Maxi mum RMS Voltage

Maxi mum D C B locki ng Voltage

Maxi mum A vera ge F orward C urrent

P eak F orward S urge C urrent : 8.3ms si ngle

half si ne -wave sup eri mpose d on rated lo ad

(JE D E C method )

Maxi mum F o rward Voltage at 20A per leg

Maxi mum D C Reverse C urrent at

Rated D C B lo cki ng Vo lta ge

Typi cal Therma l Resi stance

Operati ng Juncti on and S torag e

Temp erature Range

=25

=125

S YMB OL

RRM

RMS

F (AV )

F S M

θJ

STG

-5 5 to + 15 0

MB R4 04 0P T MB R40 45 P T MB R4 05 0P T MB R4 06 0P T MB R40 80 P T MB R4 09 0P T MB R40 10 0P T MB R40 15 0P T MB R40 20 0P T

UNITS

31.5

100

150

105

150

200

140

200

350

0.7

0.79

0 .1

1.2

0 .8

0.05

0.9

C /W

-65 to +175

Note :

Both Bonding and Chip structure are available.

December 12,2011-REV.04

PAGE . 1

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