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MBR3060PT

Description
Schottky diodes
CategoryDiscrete semiconductor    diode   
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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MBR3060PT Overview

Schottky diodes

Features

Product Name: Schottky Diode


Product model: MBR3060PT


parameter:


Repetitive reverse voltage peak Vrrm: 60V


Maximum average rectified current Io: 30A


Maximum forward surge current I FSM: 275A


Forward voltage drop VF: 0.75V when IF=15A


Maximum feedback current IR: 50uA when VR=60V


Package: TO-3P/TO-247AD


MBR3060PT Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPANJIT
Parts packaging codeTO-247AD
package instructionROHS COMPLIANT, PLASTIC, TO-3P, 3 PIN
Contacts2
Reach Compliance Codenot_compliant
ECCN codeEAR99
Is SamacsysN
Other featuresFREE WHEELING DIODE, LOW POWER LOSS
applicationEFFICIENCY
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeTO-247AD
JESD-30 codeR-PSFM-T3
Maximum non-repetitive peak forward current275 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current30 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage60 V
surface mountNO
technologySCHOTTKY
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1

MBR3060PT Preview

Download Datasheet
MBR3040PT SERIES
SCHOTTKY BARRIER RECTIFIERS
VOLTAGE
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
• Metal silicon junction, majority carrier conduction
• Low power loss, high efficiency.
• High current capability
• Guardring for overvoltage protection
• For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
• In compliance with EU RoHS 2002/95/EC directives
0.087(2.20)
0.070(1.80)
0.126(3.20)
0.110(2.80)
0.050(1.25)
0.045(1.15)
0.142(3.60)
0.125(3.20)
0.640(16.25)
0.620(15.75)
0.199(5.05)
0.175(4.45)
40 to 200 Volts
CURRENT
30 Amperes
0.600(15.25)
0.580(14.75)
0.839(21.30)
0.819(20.80)
0.095(2.40)
0.170(4.30)
0.145(3.70)
0.798(20.25)
0.777(19.75)
MECHANICAL DATA
• Case: TO-247AD/TO-3P molded plastic
• Terminals: solder plated, solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
• Mounting Position: Any
• Weight: 0.2245 ounces, 6.3673 grams.
0.030(0.75)
0.017(0.45)
0.225(5.70)
0.204(5.20)
0.225(5.70)
0.204(5.20)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PA RA ME TE R
Maxi mum Recurrent P eak Reverse Voltage
Maxi mum RMS Voltage
Maxi mum D C B locki ng Voltage
Maxi mum A verage F orward C urrent
P eak F orward S urge C urrent : 8.3ms si ngle
half si ne-wave superi mposed on rated load
(JE D E C method)
Maxi mum F orward Voltage at 15A per leg
Maxi mum D C Reverse C urrent at
Rated D C B locki ng Voltage
Typi cal Thermal Resi sta nce
Operati ng Juncti on and S torage Temperature
Range
Note :
S YMB OL
V
RRM
V
RMS
V
DC
I
F(AV )
I
FS M
V
F
I
R
R
JC
T
J
,T
S TG
MBR3 040 P T MB R30 45P T MB R30 50 PT MB R306 0P T MB R30 80P T MBR3 090 P T MB R30 100 P T MB R301 50 PT MBR3 02 00P T
UNITS
V
V
V
A
40
28
40
45
31.5
45
50
35
50
60
42
60
80
56
80
30
90
63
90
100
70
100
150
105
150
200
140
200
275
A
0.7
0.75
0.1
20
1.4
0.8
0.05
20
0.9
V
T
J
=25
O
C
T
J
=125
O
C
mA
O
C /W
O
-50 to + 150
-65 to +175
C
Both Bonding and Chip structure are available.
August 30,2010-REV.02
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