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MBR2590FCT

Description
Schottky diodes
CategoryDiscrete semiconductor    diode   
File Size49KB,2 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

Download Datasheet Parametric View All

MBR2590FCT Overview

Schottky diodes

Features

Product Name: Schottky Diode


Product model: MBR2590FCT


parameter:


Repetitive reverse voltage peak Vrrm: 90V


Maximum average rectified current Io: 25A


Maximum forward surge current I FSM: 200A


Forward voltage drop VF: 0.8V when IF=12.5A


Maximum feedback current IR: 50uA when VR=90V


Package: ITO-220AB


MBR2590FCT Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerPANJIT
Parts packaging codeTO-220AB
package instructionROHS COMPLIANT, PLASTIC, ITO-220AB, 3 PIN
Contacts3
Reach Compliance Code_compli
ECCN codeEAR99
Other featuresFREE WHEELING DIODE, LOW POWER LOSS
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.8 V
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Maximum non-repetitive peak forward current200 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current20 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage90 V
surface mountNO
technologySCHOTTKY
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED

MBR2590FCT Preview

Download Datasheet
MBR2540FCT~MBR25200FCT
SCHOTTKY BARRIER RECTIFIERS
VOLTAGE
FEATURES
0.112(2.85)
0.100(2.55)
0.272(6.9)
0.248(6.3)
40 to 200 Volts
CURRENT
25 Amperes
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
• Exceeds environmental standards of MIL-S-19500/228
• Low power loss, high efficiency.
• Low forwrd voltge, high current capability
• High surge capacity.
• For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
0.406(10.3)
0.381(9.7)
0.134(3.4)
0.118(3.0)
0.189(4.8)
0.165(4.2)
0.130(3.3)
0.114(2.9)
0.606(15.4)
0.583(14.8)
MECHANCEAL DATA
• Case: ITO-220AB Molded plastic
• Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
• Standard packaging: Any
• Weight: 0.055 ounces, 1.5615 grams.
0.055(1.4)
0.039(1.0)
0.055(1.4)
0.039(1.0)
0.028(0.7)
0.019(0.5)
0.100(2.55)
0.177(4.5)
0.137(3.5)
0.543(13.8)
0.512(13.0)
• Lead free in comply with EU RoHS 2002/95/EC directives.
0.114(2.9)
0.098(2.5)
0.100(2.55)
0.027(0.67)
0.022(0.57)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PA RA ME TE R
Maxi mum Recurrent Peak Reverse Voltage
Maxi mum RMS Voltage
Maxi mum D C B locki ng Voltage
Maxi mum A verage Forward C urrent (S ee fi g.1)
P eak F orward Surge C urrent : 8.3ms si ngle half si ne-
wave superi mposed on rated load (JED E C method)
Maxi mum F orward Voltage at 12.5A, per leg
Maxi mum D C Reverse C urrent T
J
=25
O
C
at Rated D C Bloc ki ng Voltage T
J
=125
O
C
Typi cal Thermal Res i stanc e
Operati ng Juncti on and Storage Tempe rature Range
S YMB OL
V
RRM
V
RMS
V
DC
I
F(AV )
I
FS M
V
F
I
R
R
θJC
T
J
,T
S TG
MB R254 0FC T MB R2545 FC T MB R2550 FC T MB R2560 FC T MB R2580 FC T MB R2590 FC T MB R2 5100 FC T MB R2515 0FC T MB R2520 0FC T
UNITS
V
V
V
A
A
40
28
40
45
31.5
45
50
35
50
60
42
60
80
56
80
25
200
90
63
90
100
70
100
150
105
150
200
140
200
0.7
0.75
0.05
20
2
0.8
0.9
V
mA
O
C /W
O
-50 to + 150
-65 to +175
C
NOTES:
Both Bonding and Chip structure are available.
December 28,2011-REV.03
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