MBR2040FCT datasheet, PDF - EEWORLD Datasheet

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MBR2040FCT: DescriptionSCHOTTKY BARRIER RECTIFIER Schottky rectifier; CategoryDiscrete semiconductor; File Size208KB，2 Pages; ManufacturerJCET; Websitehttp://www.cj-elec.com/; Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

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MBR2040FCT Overview

SCHOTTKY BARRIER RECTIFIER Schottky rectifier

Features

Product Name: SCHOTTKY BARRIER RECTIFIER Schottky rectifier

Product Model:MBR2040FCT

Product Description:

Schottky Barrier Chip

Guard Ring Die Construction for Transient Protection

Low Power Loss,High Efficiency

High Surge Capability

High Current Capability and Low Forward Voltage Drop

For Use in Low Voltage, High Frequency Inverters,Free Wheeling,

and Polarity Protection Applications

parameter:

PD (power consumption): 2W

Io (average rectified output current): 20A

VR (DC blocking voltage): 40V

VF (forward voltage): 0.7V

IR (Reverse Current): 0.1mA

Package: TO-220F

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-220F Plastic-Encapsulate Diodes

MBR2030, 35, 40, 45, 50FCT

SCHOTTKY BARRIER RECTIFIER

FEATURES



Schottky Barrier Chip



Guard Ring Die Construction for Transient Protection



Low Power Loss,High Efficiency



High Surge Capability



High Current Capability and Low Forward Voltage Drop



For Use in Low Voltage, High Frequency Inverters,Free Wheeling,

and Polarity Protection Applications

MAXIMUM RATINGS ( T

=25

℃

unless otherwise noted )

Value

Symbol

Parameter

MBR20

30FCT

RRM

RWM

R(RMS)

FSM

ΘJA

stg

Peak repetitive reverse voltage

Working peak reverse voltage

DC blocking voltage

RMS reverse voltage

Average rectified output current

Non-Repetitive peak forward surge current

8.3ms half sine wave

Power dissipation

Thermal resistance from junction to ambient

Junction temperature

Storage temperature

24.5

150

125

-55~+150

31.5

℃/W

℃

MBR20

35FCT

MBR20

40FCT

MBR20

45FCT

MBR20

50FCT

Unit

TO-220F

1. ANODE

2. CATHODE

3. ANODE

A,Nov,2010

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