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MBR1680CT_00001

Description
Rectifier Diode, Schottky, 1 Phase, 2 Element, 8A, 80V V(RRM), Silicon, TO-220AB,
CategoryDiscrete semiconductor    diode   
File Size97KB,4 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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MBR1680CT_00001 Overview

Rectifier Diode, Schottky, 1 Phase, 2 Element, 8A, 80V V(RRM), Silicon, TO-220AB,

MBR1680CT_00001 Parametric

Parameter NameAttribute value
MakerPANJIT
Reach Compliance Codenot_compliant
ECCN codeEAR99
Other featuresFREE WHEELING DIODE, LOW POWER LOSS
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.8 V
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Maximum non-repetitive peak forward current150 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current8 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Maximum repetitive peak reverse voltage80 V
Maximum reverse current50 µA
surface mountNO
technologySCHOTTKY
Terminal formTHROUGH-HOLE
Terminal locationSINGLE

MBR1680CT_00001 Preview

Download Datasheet
MBR1640CT~MBR16200CT
SCHOTTKY BARRIER RECTIFIERS
VOLTAGE
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O utilizing
Flame Retardant Epoxy Molding Compound.
• Exceeds environmental standards of MIL-S-19500/228
• Low power loss, high efficiency.
• Low forward voltage, high current capability
• High surge capacity.
• For use in low voltage, high frequency inverters
free wheeling, and polarlity protection applications.
• Lead free in comply with EU RoHS 2002/95/EC directives
40 to 200 Volts
CURRENT
16 Amperes
MECHANICAL DATA
• Case: TO-220AB molded plastic package
• Terminals: Lead solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
• Weight: 0.0655 ounces, 1.859 grams.
MAXIMUM RATINGS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PA RAME TE R
Maxi mum Re curre nt P eak Re verse Voltag e
Maxi mum RMS Volta ge
Maxi mum D C B lo cki ng Voltag e
Maxi mum Ave ra ge Fo rward (Se e Fi g ure 1)
P eak Forward Surge C urrent : 8 .3ms si ngle half si ne-wa ve
sup erimp osed o n rate d lo ad (JED E C me thod )
Maxi mum Forwa rd Volta ge a t 8A pe r leg
Maxi mum D C Reve rse C urre nt a t Rate d D C Blo cki ng
Voltag
Typ i cal Thermal Resistance
Op erati ng Juncti on and S torage Tempe ra ture Range
T
J
=25
O
C
T
J
=10 0
O
C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
F SM
V
F
I
R
R
θJC
T
J
,T
STG
MB R1640CT MB R1645CT MBR1650C T MBR1660C T MB R1680CT MB R1690C T MBR16100C T MBR16150C T MB R16200CT
UNITS
V
V
V
A
A
40
28
40
45
31.5
45
50
35
50
60
42
60
80
56
80
16
1 50
90
63
90
1 00
70
1 00
150
105
150
20 0
140
20 0
0.7
0.75
0.05
20
2
0.8
0.9
V
mA
O
C /W
O
-55 to +150
-65 to +175
C
NOTES:Both Bonding and Chip structure are available.
December 21,2012-REV.02
PAGE . 1
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