MBL1S THRU MBL10S
Bridge Rectifier
■特征
Features
●
■外½尺寸
Outline Dimensions and Mark
MBLS
.014(0.35)
.006(0.15)
I
o
0.8A
100V~1000V
●
V
RRM
●
玻璃钝化芯片
Glass passivated chip
●
耐正向浪涌电流½力高
High surge forward current capability
.008(0.20)
MAX
.157(4.50) .268(6.50)
.142(3.60) .283(7.20)
■
用途
●
Applications
.102(2.60)
.087(2.20)
.193(5.00)
.177(4.50)
.043(1.10)
.028(0.70)
½一般电源单相桥式整流用
General purpose 1 phase Bridge
rectifier applications
.059(1.50)
.051(1.30)
.063(1.60)
.055(1.40)
.033(0.84)
.022(0.56)
■
极限值（绝对最大额定值）
Dimensions in inches and (millimeters)
Limiting Values
（
Absolute Maximum Rating
）
参数名称
Item
反向重复峰值电压
Repetitive Peak Reverse
Voltage
平均整流输出电流
Average Rectified Output
Current
正向（不重复）浪涌电流
Surge(Non-
repetitive)Forward Current
正向浪涌电流的平方对电流
浪涌持续时间的积分值
Current Squared Time
存储温度
Storage Temperature
结温
Junction Temperature
符号
Symbol
V
RRM
单½
Unit
V
60Hz正弦波，
安装在氧化铝基板上
电阻负½½，
On alumina substrate
Ta=25℃
60Hz sine wave,
安装在玻璃-环氧基板上
R-load, Ta=25℃ On glass-epoxi substrate
60H
Z
正弦波，一个周期，T
j
=25℃
60H
Z
sine wave, 1 cycle, T
j
=25℃
1ms≤t<8.3ms Tj=25℃，单个二极管
1ms≤t<8.3ms Tj=25℃，Rating of per diode
条件
Conditions
MBL
1S
100
2S
200
4S
400
6S
600
8S
800
10S
1000
0.8
0.5
35
I
O
A
I
FSM
I
2
t
T
stg
T
j
A
A
2
S
℃
℃
5.1
-55 ~+150
-55 ~+150
■
电特性 （T
a=25℃
除非另有规定）
Electrical Characteristics
（T
a
=25℃ Unless otherwise specified）
参数名称
Item
正向峰值电压
Peak Forward Voltage
反向峰值电流
Peak Reverse Current
符号
Symbol
V
FM
I
RRM
单½
μ
Unit
V
A
测试条件
Test Condition
I
FM
=0.4A,
脉冲测试，单个二极管的额定值
I
FM
=0.4A, Pulse measurement, Rating of per diode
V
RM
=V
RRM
,脉冲测试，单个二极管的额定值
V
RM
=V
RRM
, Pulse measurement, Rating of per diode
结和环境之间，安装在氧化铝基板上
Between junction and ambient, On alumina substrate
结和环境之间，安装在玻璃-环氧基板上
Between junction and ambient, On glass-epoxi substrate
结和引线之间
Between junction and lead
最大值
Max
1.0
10
76
134
20
热阻
Thermal Resistance
R
θ
J-A
℃/W
R
θ
J-L
1/2
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