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MBL10S-F1-0000

CategoryDiscrete semiconductor    Rectifier bridge   
File Size635KB,4 Pages
ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.
Websitehttp://www.21yangjie.com/
Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.
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MBL1S THRU MBL10S
Bridge Rectifiers
Features
● UL recognition, file #E313149
● Ideal for automated placement
● High surge current capability
● Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °
C
RoHS
COMPLIANT
Typical Applications
General purpose use in AC/DC bridge full wave rectification for
power supply, lighting ballast, battery charger, home appliances,
office equipment, and telecommunication applications.
Mechanical Data
Package:
MBLS
Molding compound meets UL 94 V-0 flammability
rating, RoHS-compliant
Terminals:
Tin plated leads, solderable per
J-STD-002 and JESD22-B102
Polarity:
As marked on body
Maximum Ratings
(Ta=25℃ Unless otherwise specified
PARAMETER
Device marking code
Repetitive peak reverse voltage
On alumina substrate
Average rectified output
current @60Hz sine wave,
On glass-epoxi
R-load, Ta=40℃
substrate
Surge(non-repetitive)forward current
@60Hz half sine wave, 1 cycle, Tj=25℃
Current squared time
@1ms≤t≤8.3ms Tj=25℃,rating of per diode
Storage temperature
Junction temperature
VRRM
V
SYMBOL
UNIT
MBL1S
MBL1S
100
MBL2S
MBL2S
200
MBL4S
MBL4S
400
0.8
I
O
A
0.5
IFSM
It
Tstg
Tj
2
MBL6S
MBL6S
600
MBL8S
MBL8S
800
MBL10S
MBL10S
1000
A
A
2
S
30
3.7
-55 ~+150
-55 ~+150
■Electrical
Characteristics
(T
a
=25℃ Unless otherwise specified)
PARAMETER
Maximum instantaneous forward
voltage drop per diode
Maximum DC reverse current at
rated DC blocking voltage per diode
SYMBOL UNIT
VF
IRRM
V
μA
TEST
CONDITIONS
IFM=0.4A
VRM=VRRM
MBL1S
MBL2S
MBL4S
1.00
5
MBL6S
MBL8S
MBL10S
1/4
S-S074
Rev. 2.1, 28-Apr-14
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
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