M8050
Transistors
SOT-23
SOT-23 Plastic-Encapsulate Transistors(NPN)
RHOS
Features
Complimentary to M8550
Collector Current: I
C
=0.8A
Maximum Ratings
(
Ratings at 25℃ ambient temperature unless otherwise specified.)
Symbol
1. BASE
2. EMITTER
3. COLLECTOR
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction Temperature
Storage Temperature
Value
40
25
6
0.8
0.2
150
-55-150
Units
V
V
V
A
W
℃
℃
V
CBO
V
CEO
V
EBO
I
C
MARKING:
J3Y
P
C
T
j
T
stg
Electrical Characteristics
(
Ratings at 25℃
ambient temperature unless otherwise specified).
Parameter
Symbols
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
h
FE(1)
h
FE(2)
h
FE(3)
V
CE(sat)
V
BE(sat)
f
T
Test Condition
I
C
=100uA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=100uA, I
C
=0
V
CB
=35V, I
E
=0
V
CE
=20V, I
B
=0
V
CE
=1V, I
C
=5mA
V
CE
=1V, I
C
=100mA
V
CE
=1V, I
C
=800mA
I
C
=800mA, I
B
=80mA
I
C
=800mA, I
B
=80mA
V
CE
=6V, I
C
=20mA,f=30MHz
Limits
Min
40
25
6
Max
Unit
V
V
V
nA
nA
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
DC current gain
Collector-emitter saturation voltage
Base -emitter saturation voltage
Transition frequency
CLASSIFICATION OF h
FE(2)
RANK
RANGE
100
100
45
80
40
400
0.50
1.20
150
V
V
MHz
L
80-350
H
350-400
Rev 8: Nov 2014
www.born-tw.com
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