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LSGC085R041W3

Description
Drain-source voltage (Vdss): 85V Continuous drain current (Id) (at 25°C): 120A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 4.1mΩ @ 50A, 10V Maximum power consumption Dispersion (Ta=25°C): 208W(Tc) Type: N-channel
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size812KB,10 Pages
ManufacturerLonten Semiconductor Co., Ltd.
Websitehttp://www.lonten.cc
Longteng Semiconductor Co., Ltd. is a high-tech enterprise dedicated to the research and development and sales of new power semiconductor devices. The company regards technological innovation as the core competitiveness of enterprise development and has built a first-class R&D center and application testing laboratory in China. The company has passed the ISO9001-2015 quality system certification and applied for 83 patents in the field of power semiconductor device design and application. The company has built a first-class R&D center and laboratory in China. The company's super junction power field effect transistor (Super Junction VDMOS, Shielding Gate VDMOS), insulated gate bipolar transistor (IGBT), fast recovery diode (FRD) and other series of products have the advantages of high energy efficiency, high reliability and high cost performance. They have been widely used in many fields such as computer and server power supply, LED drive power supply, charger, adapter, TV board power supply, etc.; they continue to grow in the fields of new energy vehicle charging piles, on-board chargers, automotive motor drives, photovoltaic inverters, industrial inverters, UPS, and welding machine markets.
Download Datasheet Parametric View All

LSGC085R041W3 Overview

Drain-source voltage (Vdss): 85V Continuous drain current (Id) (at 25°C): 120A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 4.1mΩ @ 50A, 10V Maximum power consumption Dispersion (Ta=25°C): 208W(Tc) Type: N-channel

LSGC085R041W3 Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)85V
Continuous drain current (Id) at 25°C120A(Tc)
Gate-source threshold voltage4V @ 250uA
Drain-source on-resistance4.1mΩ @ 50A,10V
Maximum power dissipation (Ta=25°C)208W(Tc)
typeN channel

LSGC085R041W3 Preview

Download Datasheet
LSGC085R041W3\LSGE085R041W3
Lonten N-channel 85 V, 120A, 4.1mΩ Power MOSFET
Features
• Extremely low on-resistance R
DS(on)
• Excellent Q
g
xR
DS(on)
product(FOM)
• Qualified according to JEDEC criteria
Product Summary
V
DS
R
DS(on)
I
D
85V
3.4mΩ
120A
Applications
• Motor control and drive
• Battery management
• UPS (Uninterrupible Power Supplies)
100% Avalanche Tested
TO-220
TO-263
Absolute Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
T
C
= 25°C (Silicon limit)
T
C
= 25°C (Package limit)
T
C
= 100°C (Silicon limit)
Pulsed drain current (T
C
= 25°C, t
p
limited by T
jmax
)
Avalanche energy, single pulse (L=0.5mH, Rg=25Ω)
Gate-Source voltage
Power dissipation (T
C
= 25°C)
Operating junction and storage temperature
I
D pulse
E
AS(Note 1)
V
GS
P
tot
T
j
,
T
stg
I
D
172
120
109
480
272
±20
208
-55...+150
A
mJ
V
W
°C
A
Symbol
V
DS
Value
85
Unit
V
※.
Notes:1.EAS is tested at starting Tj = 25℃, L = 0.5mH, IAS = 33A, VGS = 10V. EAS(max)=1089mJ under
IAS(max)=66A and above Conditions;
Version 1.1,Jan-2020
1
www.lonten.cc
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