EEWORLDEEWORLDEEWORLD

Part Number

Search

LSG70R640GT

Description
Drain-source voltage (Vdss): 700V Continuous drain current (Id) (at 25°C): 7A Gate-source threshold voltage: 4.5V @ 250uA Drain-source on-resistance: 640mΩ @ 3.5A, 10V Maximum power dissipation ( Ta=25°C): 83W Type: N-channel
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size1MB,14 Pages
ManufacturerLonten Semiconductor Co., Ltd.
Websitehttp://www.lonten.cc
Longteng Semiconductor Co., Ltd. is a high-tech enterprise dedicated to the research and development and sales of new power semiconductor devices. The company regards technological innovation as the core competitiveness of enterprise development and has built a first-class R&D center and application testing laboratory in China. The company has passed the ISO9001-2015 quality system certification and applied for 83 patents in the field of power semiconductor device design and application. The company has built a first-class R&D center and laboratory in China. The company's super junction power field effect transistor (Super Junction VDMOS, Shielding Gate VDMOS), insulated gate bipolar transistor (IGBT), fast recovery diode (FRD) and other series of products have the advantages of high energy efficiency, high reliability and high cost performance. They have been widely used in many fields such as computer and server power supply, LED drive power supply, charger, adapter, TV board power supply, etc.; they continue to grow in the fields of new energy vehicle charging piles, on-board chargers, automotive motor drives, photovoltaic inverters, industrial inverters, UPS, and welding machine markets.
Download Datasheet Parametric View All

LSG70R640GT Overview

Drain-source voltage (Vdss): 700V Continuous drain current (Id) (at 25°C): 7A Gate-source threshold voltage: 4.5V @ 250uA Drain-source on-resistance: 640mΩ @ 3.5A, 10V Maximum power dissipation ( Ta=25°C): 83W Type: N-channel

LSG70R640GT Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)700V
Continuous drain current (Id) at 25°C7A
Gate-source threshold voltage4.5V @ 250uA
Drain-source on-resistance640mΩ @ 3.5A,10V
Maximum power dissipation (Ta=25°C)83W
typeN channel

LSG70R640GT Preview

Download Datasheet
LSC70R640GT/LSD70R640GT/LSG70R640GT/
LSH70R640GT/LSF70R640GT
LonFET
Lonten N-channel 700V, 7A, 0.64Ω LonFET
TM
Power MOSFET
Description
LonFET
TM
Product Summary
V
DS
@ T
j,max
R
DS(on),max
I
DM
Q
g,typ
750V
0.64Ω
21A
15nC
The resulting
Power MOSFET is fabricated using
advanced super junction technology.
device has extremely low on resistance, making it
especially suitable for applications which require
superior power density and outstanding efficiency.
Features
Ultra low R
DS(on)
Ultra low gate charge (typ. Q
g
= 15nC)
100% UIS tested
RoHS compliant
TO-251
TO-252
TO-220
TO-220MF
Applications
D
TO-262
Power faction correction (PFC).
Switched mode power supplies (SMPS).
Uninterruptible power supply (UPS).
G
S
N-Channel MOSFET
Pb
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Continuous drain current
( T
C
= 25° )
C
( T
C
= 100° )
C
Pulsed drain current
1)
Gate-Source voltage
Avalanche energy, single pulse
2)
Avalanche energy, repetitive
3)
Avalanche current, repetitive
3)
Power Dissipation
TO-220/TO-262 /
I
DM
V
GSS
E
AS
E
AR
I
AR
V
DSS
I
D
Symbol
Value
700
7
4.4
21
±30
116
0.5
7
83
0.67
Unit
V
A
A
A
V
mJ
mJ
A
W
W/°
C
TO-251/TO-252 ( T
C
= 25° )
C
- Derate above 25°
C
Power Dissipation
TO-220F ( T
C
= 25° )
C
- Derate above 25°
C
Mounting torque To-220 ( M3 and M3.5 screws )
P
D
40
0.32
60
W
W/°
C
Ncm
Version 3.0
2018
1
www.lonten.cc
Where are PCB professionals heading?
I came across this article by accident. It is really well written. I would like to share it with you all. . . Understanding the future of circuit board layout professionals is an important issue in it...
led2015 Talking
Ubuntu development environment installation (I) system installation
Ubuntu development environment installation The development environment installation tutorial and related documents provided by Mir Technology are not particularly detailed, so we hereby record the de...
小火苗 NXP MCU
Implementation strategies for Industrial IoT networks
Industrial Internet of Things (IIoT) systems continue to mature, become more distributed and develop new capabilities. It is predicted that by 2023, there will be 2 billion connected IoT devices deplo...
朗锐智科 RF/Wirelessly
The long-lasting coronavirus
The coronavirus has been going on for so long and it hasn’t stopped. The virus is constantly mutating. Will humans perish from the virus one day?...
S3S4S5S6 Talking
XXXXX Teardown
[i=s]This post was last edited by dcexpert on 2022-1-23 19:11[/i]I found some interesting things recently. I'll open one of them first. Can you guess what it is?This is a relatively unique wearable pr...
dcexpert Making friends through disassembly
kitty released version 0.70
Kitty, a fork of the famous terminal software Putty, has released version 0.70. In this version, a simple text editor is hidden, which can be called by the shortcut key [b]shfit+F2[/b]. Software downl...
dcexpert MicroPython Open Source section

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

About Us Customer Service Contact Information Datasheet Sitemap LatestNews

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190

Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号