EEWORLDEEWORLDEEWORLD

Part Number

Search

LSB60R039GT

Description
Drain-source voltage (Vdss): 600V Continuous drain current (Id) (at 25°C): 80A (Tc) Gate-source threshold voltage: 4.5V @ 250uA Drain-source on-resistance: 39mΩ @ 40A, 10V Maximum power consumption Dispersion (Ta=25°C): 500W(Tc) Type: N-channel
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size785KB,7 Pages
ManufacturerLonten Semiconductor Co., Ltd.
Websitehttp://www.lonten.cc
Longteng Semiconductor Co., Ltd. is a high-tech enterprise dedicated to the research and development and sales of new power semiconductor devices. The company regards technological innovation as the core competitiveness of enterprise development and has built a first-class R&D center and application testing laboratory in China. The company has passed the ISO9001-2015 quality system certification and applied for 83 patents in the field of power semiconductor device design and application. The company has built a first-class R&D center and laboratory in China. The company's super junction power field effect transistor (Super Junction VDMOS, Shielding Gate VDMOS), insulated gate bipolar transistor (IGBT), fast recovery diode (FRD) and other series of products have the advantages of high energy efficiency, high reliability and high cost performance. They have been widely used in many fields such as computer and server power supply, LED drive power supply, charger, adapter, TV board power supply, etc.; they continue to grow in the fields of new energy vehicle charging piles, on-board chargers, automotive motor drives, photovoltaic inverters, industrial inverters, UPS, and welding machine markets.
Download Datasheet Parametric View All

LSB60R039GT Overview

Drain-source voltage (Vdss): 600V Continuous drain current (Id) (at 25°C): 80A (Tc) Gate-source threshold voltage: 4.5V @ 250uA Drain-source on-resistance: 39mΩ @ 40A, 10V Maximum power consumption Dispersion (Ta=25°C): 500W(Tc) Type: N-channel

LSB60R039GT Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)600V
Continuous drain current (Id) at 25°C80A(Tc)
Gate-source threshold voltage4.5V @ 250uA
Drain-source on-resistance39mΩ @ 40A,10V
Maximum power dissipation (Ta=25°C)500W(Tc)
typeN channel

LSB60R039GT Preview

Download Datasheet
LSB60R039GT
LonFET
Lonten N-channel 600V, 80A, 0.039Ω LonFET
TM
Power MOSFET
Description
LonFET
TM
Product Summary
V
DS
@ T
j,max
R
DS(on),max
I
DM
Q
g,typ
650V
0.039Ω
240A
110nC
The resulting
Power MOSFET is fabricated using
advanced super junction technology.
device has extremely low on resistance, making it
especially suitable for applications which require
superior power density and outstanding efficiency.
Features
Ultra low R
DS(on)
Ultra low gate charge (typ. Q
g
= 110nC)
100% UIS tested
RoHS compliant
G
TO-247
D
Applications
Power faction correction (PFC).
Switched mode power supplies (SMPS).
Uninterruptible power supply (UPS).
S
N-Channel MOSFET
Pb
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Continuous drain current
( T
C
= 25° )
C
( T
C
= 100° )
C
Pulsed drain current
1)
Gate-Source voltage
Avalanche energy, single pulse
2)
Power Dissipation
TO-247 ( T
C
= 25° )
C
P
D
- Derate above 25°
C
Operating and Storage Temperature Range
Continuous diode forward current
Diode pulse current
T
J
, T
STG
I
S
I
S,pulse
4.0
-55 to +150
80
240
W/°
C
°
C
A
A
I
DM
V
GSS
E
AS
V
DSS
I
D
Symbol
Value
600
80
52
240
±30
2350
500
Unit
V
A
A
A
V
mJ
W
Thermal Characteristics TO-247
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Soldering temperature, wavesoldering only allowed
T
sold
at leads. (1.6mm from case for 10s)
260
°
C
R
θJC
R
θJA
Symbol
Value
0.25
62
Unit
°
C/W
°
C/W
Version 4.0
2018
1
www.lonten.cc
How to protect the microcontroller from read and write
...
犹太人QQ TI Technology Forum
AVR Offline Downloader - SD Card - with File System
AVR ISP offline download reference routines, you can refer to them if you need them, to facilitate mass production tools...
weizhongc 51mcu
EEWORLD University Hall----Intelligent Connected Vehicles from the Inside Out: Current Status and Development of Internet of Vehicles
Intelligent connected cars from inside to outside: Current status and development of Internet of Vehicles : https://training.eeworld.com.cn/course/6135...
EE大学堂 Automotive Electronics
Application of relay (flooding relay, directional relay) in wireless communication
Wireless relay, that is, relay nodes play the role of relays in wireless networks, can relay and amplify signals, thereby extending the coverage of wireless networks. In terms of the operation mechani...
成都亿佰特 RF/Wirelessly
Has anyone used the SKY1311T card reader chip?
Has anyone used the SKY1311T card reader chip? I know the SPI protocol, but I don't know how to start writing it. I don't have any ideas. I hope someone can give me some advice, or if there is a sampl...
zhangxiaobudong 51mcu
The most powerful TI Bluetooth 5.0 solution CC2652R chip module
The CC2652R device is a multiprotocol wireless 2.4GHz MCU targeting Thread, Zigbee, Bluetooth 5 low energy, IEEE 802.15.4g, smart objects with IPv6 (6LoWPAN), Wi-SUN and proprietary systems including ...
fish001 Wireless Connectivity

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

About Us Customer Service Contact Information Datasheet Sitemap LatestNews

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190

Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号