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LS4148T/R13

Description
Rectifier Diode, 1 Element, 0.15A, 100V V(RRM), Silicon, ROHS COMPLIANT, GLASS, QUADROMELF-2
CategoryDiscrete semiconductor    diode   
File Size91KB,3 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance  

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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LS4148T/R13 Overview

Rectifier Diode, 1 Element, 0.15A, 100V V(RRM), Silicon, ROHS COMPLIANT, GLASS, QUADROMELF-2

LS4148T/R13 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerPANJIT
Parts packaging codeMELF
package instructionO-LELF-R2
Contacts2
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-LELF-R2
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current0.15 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.5 W
Maximum repetitive peak reverse voltage100 V
Maximum reverse recovery time0.004 µs
surface mountYES
Terminal formWRAP AROUND
Terminal locationEND
Maximum time at peak reflow temperatureNOT SPECIFIED

LS4148T/R13 Preview

Download Datasheet
LS4148
FAST SWITCHING SURFACE MOUNT DIODES
VOLTAGE
100 Volts
POWER
500 mWatts
QUADRO-MELF
Unit : inch (mm)
FEATURES
• Fast switching Speed.
• Surface Mount Package Ideally Suited For Automatic Insertion.
• Silicon Epitaxal Planar Construction.
• In compliance with EU RoHS 2002/95/EC directives
.0
67
(1
.7
)
MECHANICAL DATA
• Case: QUADRD MELF, Glass
• Terminals: Solderable per MIL-STD-750, Method 2026
• Polarity: Cathode Band
• Marking: Cathode Band Only
• Weight: 0.03 grams
• Packing information
T/R - 2.5K per 7" plastic reel
T/R - 10K per 13” plastic reel
.020(0.5)
.012(0.3)
.146(3.7)
.130(3.3)
.020(0.5)
.012(0.3)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
J
=25°C unless otherwise noted)
PARAMETER
Peak Reverse Voltage
Maximum Average Forward Current at Ta=25
Surge Forward Current at t < 1s and Tj= =25
Power Dissipation at Tamb= 25
O
O
SYMBOL
V
R M
C And f >50Hz
I
F (A V )
I
F S M
P
T O T
V
F
LS 4148
100
150
500
500
1.0
25
5
50
4
4
300
-65 to +175
.063(1.6)
.055(1.4)DIA.
UNITS
V
mA
mA
mW
V
nA
µA
µA
pF
ns
O
O
C
C
Maximum Forward Voltage at I
F
=10mA
Maximum Leakage Current
at V
R
=20V
at V
R
=75V
at V
R
=20V ,T
J
= 150
O
C
Maximum Capacitance at V
F
=V
R
=0
Maximum Reverse Recovery Time From
I
F
=-I
R
=10mA to I
R R
=-1mA ,V
R
=6V R
L
=100
Typical Thermal Resistance
Junction Temperature and Storage Temperature Range
I
R
C
J
t
rr
R
θ
J A
T
J
,T
S
C/W
O
C
NOTE:
1. CJ at V
R
=0, f=1MHZ
2. From I
F
=10mA to I
R
=1mA, V
R
=6Volts, R
L
=100Ω
STAD-FEB.17.2009
PAGE . 1
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