EEWORLDEEWORLDEEWORLD

Part Number

Search

LNE06R062

Description
Drain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 120A (Tc) Gate-source threshold voltage: 3V @ 250uA Drain-source on-resistance: 10mΩ @ 10A, 4.5V Maximum power consumption Dispersion (Ta=25°C): 120W(Tc) Type: N-channel
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size1019KB,9 Pages
ManufacturerLonten Semiconductor Co., Ltd.
Websitehttp://www.lonten.cc
Longteng Semiconductor Co., Ltd. is a high-tech enterprise dedicated to the research and development and sales of new power semiconductor devices. The company regards technological innovation as the core competitiveness of enterprise development and has built a first-class R&D center and application testing laboratory in China. The company has passed the ISO9001-2015 quality system certification and applied for 83 patents in the field of power semiconductor device design and application. The company has built a first-class R&D center and laboratory in China. The company's super junction power field effect transistor (Super Junction VDMOS, Shielding Gate VDMOS), insulated gate bipolar transistor (IGBT), fast recovery diode (FRD) and other series of products have the advantages of high energy efficiency, high reliability and high cost performance. They have been widely used in many fields such as computer and server power supply, LED drive power supply, charger, adapter, TV board power supply, etc.; they continue to grow in the fields of new energy vehicle charging piles, on-board chargers, automotive motor drives, photovoltaic inverters, industrial inverters, UPS, and welding machine markets.
Download Datasheet Parametric View All

LNE06R062 Overview

Drain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 120A (Tc) Gate-source threshold voltage: 3V @ 250uA Drain-source on-resistance: 10mΩ @ 10A, 4.5V Maximum power consumption Dispersion (Ta=25°C): 120W(Tc) Type: N-channel

LNE06R062 Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)60V
Continuous drain current (Id) at 25°C120A(Tc)
Gate-source threshold voltage3V @ 250uA
Drain-source on-resistance10mΩ @ 10A,4.5V
Maximum power dissipation (Ta=25°C)120W(Tc)
typeN channel

LNE06R062 Preview

Download Datasheet
LNC06R062/LND06R062/LNE06R062
Lonten N-channel 60V, 120A, 6.2mΩ Power MOSFET
Description
These N-Channel enhancement mode power field
effect
transistors
are
using
trench
DMOS
technology. This advanced technology has been
especially tailored to minimize on-state resistance,
provide superior switching performance, and with
stand high energy pulse in the avalanche and
commutation mode. These devices are well suited
for high efficiency fast switching applications.
Product Summary
V
DSS
R
DS(on).max
@ V
GS
=10V
I
D
60V
6.2mΩ
120A
Pin Configuration
Features
60V,120A,R
DS(on).max
=6.2mΩ@V
GS
=10V
Improved dv/dt capability
Fast switching
100% EAS Guaranteed
Green device available
G
TO-220
TO-220MF
D
Applications
TO-263
Motor Drives
UPS
DC-DC Converter
N-Channel MOSFET
S
Pb
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Continuous drain current ( T
C
= 25° )
1)
C
Continuous drain current ( T
C
= 100° )
1)
C
Pulsed drain current
2)
Gate-Source voltage
Avalanche energy
3)
T
C
= 25° unless otherwise noted
C
Symbol
V
DSS
I
D
Value
60
120
87
Unit
V
A
A
A
V
mJ
W
W
°
C
°
C
I
DM
V
GSS
E
AS
P
D
480
±20
320
120
45
Power Dissipation ( T
C
= 25° ) TO-220/TO-263
C
Power Dissipation ( T
C
= 25° ) TO-220MF
C
Storage Temperature Range
Operating Junction Temperature Range
T
STG
T
J
-55 to +150
-55 to +150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case TO-220/TO-263
R
θJC
Thermal Resistance, Junction-to-Case TO-220MF
Thermal Resistance, Junction-to-Ambient TO-220/TO-263
R
θJA
Thermal Resistance, Junction-to-Ambient TO-220MF
80
°
C/W
2.8
62
°
C/W
°
C/W
Symbol
Value
1.0
Unit
°
C/W
Version 1.3, 2018
1
www.lonten.cc
Why is Hongmeng not the second Android? How do you view the traces of Android in Harmony OS?
Huawei will hold a press conference for the launch of the Hongmeng operating system and Huawei's all-scenario new products at 8 pm on June 2. The official Weibo account was also renamed Harmony OS at ...
成都亿佰特 Domestic Chip Exchange
Solution to TI cc2538 serial port failure to program and bootloader failure to enter
When using the serial port to burn a program in Ubuntu, an error occurs halfway through. Restarting does not solve the problem. The bootloader cannot be entered and the message "Sync error" keeps appe...
灞波儿奔 Microcontroller MCU
Shenzhen Electronic Hardware Engineer Recruitment
Job Description:Responsible for the improvement and upgrade of the electronic hardware of the productResponsible for the procurement and tracking management of electronic partsResponsible for the plan...
sbim Recruitment
『Anxinke Bluetooth Development Board PB-02-Kit』-3: Start Docker
[i=s]This post was last edited by MianQi on 2022-2-11 09:40[/i]OS: Ubuntu 20.04 LTS Reference: https://hub.docker.com/r/marcelstoer/nodemcu-build/First check if Docker is there: docker --version Docke...
MianQi RF/Wirelessly
lan8720A strange reset problem?
I made a board using the stm32f407 chip, and the network solution uses the lan8720A chip. However, I encountered a strange problem: After connecting the board to the power system, turn on the power sw...
bigbat stm32/stm8
Discussion on the wireless transmission distance of microwave signals
When it comes to wireless transmission, the issue that everyone is most concerned about is the transmission distance. If it is an ideal transmission environment, this problem is not difficult to solve...
JasonYoo RF/Wirelessly

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

About Us Customer Service Contact Information Datasheet Sitemap LatestNews

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190

Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号