EEWORLDEEWORLDEEWORLD

Part Number

Search

LNC7N60

Description
Drain-source voltage (Vdss): 600V Continuous drain current (Id) (at 25°C): 7A Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 1.3Ω @ 3.5A, 10V Maximum power dissipation ( Ta=25°C): 100W Type: N-channel
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size827KB,9 Pages
ManufacturerLonten Semiconductor Co., Ltd.
Websitehttp://www.lonten.cc
Longteng Semiconductor Co., Ltd. is a high-tech enterprise dedicated to the research and development and sales of new power semiconductor devices. The company regards technological innovation as the core competitiveness of enterprise development and has built a first-class R&D center and application testing laboratory in China. The company has passed the ISO9001-2015 quality system certification and applied for 83 patents in the field of power semiconductor device design and application. The company has built a first-class R&D center and laboratory in China. The company's super junction power field effect transistor (Super Junction VDMOS, Shielding Gate VDMOS), insulated gate bipolar transistor (IGBT), fast recovery diode (FRD) and other series of products have the advantages of high energy efficiency, high reliability and high cost performance. They have been widely used in many fields such as computer and server power supply, LED drive power supply, charger, adapter, TV board power supply, etc.; they continue to grow in the fields of new energy vehicle charging piles, on-board chargers, automotive motor drives, photovoltaic inverters, industrial inverters, UPS, and welding machine markets.
Download Datasheet Parametric View All

LNC7N60 Overview

Drain-source voltage (Vdss): 600V Continuous drain current (Id) (at 25°C): 7A Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 1.3Ω @ 3.5A, 10V Maximum power dissipation ( Ta=25°C): 100W Type: N-channel

LNC7N60 Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)600V
Continuous drain current (Id) at 25°C7A
Gate-source threshold voltage4V @ 250uA
Drain-source on-resistance1.3Ω @ 3.5A,10V
Maximum power dissipation (Ta=25°C)100W
typeN channel

LNC7N60 Preview

Download Datasheet
LNC7N60\LND7N60
Lonten N-channel 600V, 7A Power MOSFET
Description
The Power MOSFET is fabricated using the
advanced
planar
VDMOS
technology.
The
resulting device has low conduction resistance,
superior switching performance and high avalance
energy.
Product Summary
V
DSS
I
D
R
DS(on),max
Q
g,typ
600V
7A
1.3Ω
20.6nC
Features
Low R
DS(on)
Low gate charge (typ. Q
g
=20.6nC)
100% UIS tested
RoHS compliant
G
TO-220
TO-220F
D
Applications
Power faction correction.
Switched mode power supplies.
LED driver.
S
N-Channel MOSFET
Pb
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Continuous drain current
( T
C
= 25° )
C
( T
C
= 100° )
C
Pulsed drain current
1)
Gate-Source voltage
Avalanche energy, single pulse
2)
Peak diode recovery dv/dt
3)
Power Dissipation
TO-220F ( T
C
= 25° )
C
Derate above 25°
C
Power Dissipation
TO-220\ TO-251\ TO-252 ( T
C
= 25° )
C
Derate above 25°
C
Operating juncition and storage temperature range
Continuous diode forward current
Diode pulse current
T
J
, T
STG
I
S
I
S,pulse
P
D
100
0.8
-55 to +150
7
28
W
W/°
C
°
C
A
A
I
DM
V
GSS
E
AS
dv/dt
V
DSS
I
D
Symbol
Value
600
7
4.2
28
±30
405
5
39
0.31
Unit
V
A
A
A
V
mJ
V/ns
W
W/°
C
Thermal Characteristics
Parameter
Thermal resistance, Junction-to-case
Thermal resistance, Junction-to-ambient
Symbol
R
θJC
R
θJA
Value
TO-220F
3.2
62.5
TO-220\ TO-251\ TO-252
1.25
110
Unit
°
C/W
°
C/W
Version 1.0
2018
1
www.lonten.cc
Connected cars, where is the future?
From Silicon Valley startups to established German OEMs, to drivers and avid car enthusiasts around the world, everyone is wondering what the future of connected cars will look like. How will it chang...
alan000345 TI Technology Forum
What PCB design practice materials are there?
I want to practice PCB design, but there is no good design practice material. I don't know where to find it....
一眼呆 PCB Design
EEWORLD University ---- Live playback: The most important component of the analog world - Signal chain and power supply: USB Type-C? PD special session
Live playback: The most important component of the analog world - Signal chain and power supply: USB Type-C? PD special session : https://training.eeworld.com.cn/course/67746...
hi5 Integrated technical exchanges
Problems connecting Bluetooth module with CC2541
I would like to ask, when using CC2541 to connect a Bluetooth module, is it easier to program CC2541 as a host or as a slave?What about programming? Thanks!...
chenbingjy Wireless Connectivity
microchip zero-drift operational amplifier
...
microchip2020 Microchip MCU
Matter Development Guide (VI): Network Configuration and Lighting-App Examples
Previously, we built the Matter firmware and chip-tool. Next, we need to establish a Thread network and configure the network through BLE so that we can control the Matter device through chip-tool.1 E...
okhxyyo RF/Wirelessly

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

About Us Customer Service Contact Information Datasheet Sitemap LatestNews

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190

Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号