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LNB20N65

Description
Drain-source voltage (Vdss): 650V Continuous drain current (Id) (at 25°C): 20A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 500mΩ @ 10A, 10V Maximum power dissipation (Ta=25°C): 250W(Tc) Type: N channel
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size1MB,10 Pages
ManufacturerLonten Semiconductor Co., Ltd.
Websitehttp://www.lonten.cc
Longteng Semiconductor Co., Ltd. is a high-tech enterprise dedicated to the research and development and sales of new power semiconductor devices. The company regards technological innovation as the core competitiveness of enterprise development and has built a first-class R&D center and application testing laboratory in China. The company has passed the ISO9001-2015 quality system certification and applied for 83 patents in the field of power semiconductor device design and application. The company has built a first-class R&D center and laboratory in China. The company's super junction power field effect transistor (Super Junction VDMOS, Shielding Gate VDMOS), insulated gate bipolar transistor (IGBT), fast recovery diode (FRD) and other series of products have the advantages of high energy efficiency, high reliability and high cost performance. They have been widely used in many fields such as computer and server power supply, LED drive power supply, charger, adapter, TV board power supply, etc.; they continue to grow in the fields of new energy vehicle charging piles, on-board chargers, automotive motor drives, photovoltaic inverters, industrial inverters, UPS, and welding machine markets.
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LNB20N65 Overview

Drain-source voltage (Vdss): 650V Continuous drain current (Id) (at 25°C): 20A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 500mΩ @ 10A, 10V Maximum power dissipation (Ta=25°C): 250W(Tc) Type: N channel

LNB20N65 Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)650V
Continuous drain current (Id) at 25°C20A(Tc)
Gate-source threshold voltage4V @ 250uA
Drain-source on-resistance500mΩ @ 10A,10V
Maximum power dissipation (Ta=25°C)250W(Tc)
typeN channel

LNB20N65 Preview

Download Datasheet
LNC20N65/LND20N65/LNB20N65
Lonten N-channel 650V, 20A Power MOSFET
Description
The Power MOSFET is fabricated using the
advanced
planer
VDMOS
technology.
The
resulting device has low conduction resistance,
superior switching performance and high avalanche
energy.
Product Summary
V
DSS
I
D
R
DS(on),max
Q
g,typ
650V
20A
0.5Ω
58.3 nC
Features
Low R
DS(on)
Low gate charge (typ. Q
g
= 58.3 nC)
100% UIS tested
RoHS compliant
G
S
N-Channel MOSFET
Pb
TO-220
TO-220F
D
TO-247
Applications
Power factor correction.
Switched mode power supplies.
LED driver.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Continuous drain current
( T
C
= 25°C )
( T
C
= 100°C )
Pulsed drain current
1)
Gate-Source voltage
Avalanche energy, single pulse
2)
Peak diode recovery dv/dt
3)
Power Dissipation TO-220F ( T
C
= 25°C )
Derate above 25°C
Power Dissipation
TO-247/TO-220 ( T
C
= 25°C )
Derate above 25°C
Operating junction and storage temperature range
Continuous diode forward current
Diode pulse current
T
J
, T
STG
I
S
I
S,pulse
P
D
250
2
-55 to +150
20
80
W
W/°C
°C
A
A
I
DM
V
GSS
E
AS
dv/dt
V
DSS
I
D
Symbol
Value
650
20
12.5
80
±30
720
5
45
0.36
Unit
V
A
A
A
V
mJ
V/ns
W
W/°C
Thermal Characteristics
Parameter
Thermal resistance, Junction-to-case
Symbol
R
θJC
R
θJA
Value
TO-220F
2.78
62.5
TO-247/TO-220
0.5
40
Unit
°C/W
Version 21,Jan-2020
Thermal resistance, Junction-to-ambient
1
www.lonten.cc
°C/W
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