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LL4450

Description
0.2 A, 40 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size55KB,1 Pages
ManufacturerNanjing International Group Co.,Ltd
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LL4450 Overview

0.2 A, 40 V, SILICON, SIGNAL DIODE

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LL914...LL4454
Silicon Epitaxial Planar Switching Diode
for general purpose and switching.
LL-34
Type
Peak
Reverse
Voltage
V
RM
(V)
100
100
75
40
75
35
100
100
40
40
30
75
Aver.
Rectified
Current
I
F(AV)
Max. (mA)
75
150
150
150
150
150
150
150
150
150
150
150
Power Dissip.
at 25
o
C
P
tot
(mW)
500
500
500
400
400
500
500
500
400
400
400
400
Junction
Temperature
T
j
(
o
C)
200
200
200
175
175
200
200
200
175
175
175
175
Forward Voltage
V
F
Max. (V)
1
1
1
0.55
0.55
1
1
1
0.54
0.5
0.55
1
at I
F
(mA)
10
10
50
0.1
0.1
30
20
30
0.5
0.1
0.01
10
Reverse Current
I
R
Max. (nA)
25
25
50
50
50
100
25
25
50
50
50
100
at V
R
(V)
20
20
50
30
50
25
20
20
30
30
20
50
Reverse Recovery Time
t
rr
Max.(ns)
4
4
2
2
2
2
4
4
4
10
-
4
Conditions
I
F
= 10 mA, V
R
= 6 V,
R
L
= 100
Ω,
to I
R
= 1 mA
I
F
= 10 mA, V
R
= 6 V,
R
L
= 100
Ω,
to I
R
= 1 mA
I
F
= 10 mA, V
R
= 6 V,
R
L
= 100
Ω,
to I
R
= 1 mA
I
F
= 10 mA, V
R
= 6 V,
R
L
= 100
Ω,
to I
R
= 1 mA
I
F
= 10 mA, V
R
= 6V,
R
L
= 100
Ω,
to I
R
= 1 mA
I
F
= 10 mA, V
R
= 6V,
R
L
= 100
Ω,
to I
R
= 1 mA
I
F
= 10 mA, V
R
= 6V,
R
L
= 100
Ω,
to I
R
= 1 mA
I
F
= 10 mA, V
R
= 6 V,
R
L
= 100
Ω,
to I
R
= 1 mA
I
F
= I
R
= 10 mA, to I
R
= 1 mA
I
F
= I
R
= 10 mA, to I
R
= 1 mA
-
I
F
= I
R
= 10 mA, to I
R
= 1 mA
LL914
LL4149
LL4151
LL4152
LL4153
LL4154
LL4447
LL4449
LL4450
LL4451
LL4453
LL4454
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