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KTA1504

Description
Rated power: 150mW Collector current Ic: 150mA Collector-emitter breakdown voltage Vce: 50V Transistor type: PNP
CategoryDiscrete semiconductor    triode   
File Size210KB,2 Pages
ManufacturerShenzhen Heketai Electronics Co., Ltd.
Websitehttp://www.heketai.com
Founded in 1992, Hekotech is a high-tech innovative enterprise specializing in the R&D, design, packaging, testing, production and sales of semiconductor analog chips and discrete devices. The product line includes lithium battery protection IC, charging management IC, LDO, MOSFET, diode, TVS, bridge stack, triode and other discrete devices and integrated circuits, providing customers with application solutions and on-site technical support services. The company has ISO9001, ISO14001, IATF16949 quality system certification. The products include semiconductors and passive components, which are widely used in power supply, lighting, medical electronics, small appliances, communications, security, instruments, industrial control, automotive electronics and other fields.
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KTA1504 Overview

Rated power: 150mW Collector current Ic: 150mA Collector-emitter breakdown voltage Vce: 50V Transistor type: PNP

KTA1504 Parametric

Parameter NameAttribute value
rated power150mW
Collector current Ic150mA
Collector-emitter breakdown voltage Vce50V
Transistor typePNP

KTA1504 Preview

Download Datasheet
Plastic-Encapsulate Transistors
FEATURES
Complementary To KTC3875.
Excellent HFE Linearity.
Low noise.
KTA1504(PNP)
Maximum Ratings (
TA=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power dissipation
Junction Temperature
Storage Temperature
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
Tstg
Value
-50
-50
-5
-0. 15
0.15
150
-55to +150
Unit
V
V
V
A
W
1. BASE
2. EMITTER
3. COLLECTO
SOT-23
ELECTRICAL CHARACTERISTICS
( @ Ta=25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
unless otherwise specified)
Test conditions
I
C
=-100μA,I
E
=0
I
C
=-1mA,I
B
=0
I
E
=-100μA,I
C
=0
V
CB
=-50V,I
E
=0
V
EB
=-5V,I
C
=0
V
CE
=-6V,I
C
=-2mA
I
C
=-100mA, I
B
=-10mA
V
CE
=-10V, I
C
= -1mA
V
CB
=-10V,I
E
=0,f=1MHz
V
CE
=-6V,I
C
=-0.1mA,
F=1KHz,Rg=10KΩ
80
4.0
1.0
7.0
10
70
-0.1
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
Cob
NF
Min
-50
-50
-5
Typ
Max
Unit
V
V
V
-0.1
-0.1
400
-0.3
μA
μA
V
MHz
pF
dB
CLASSIFICATION OF h
FE
Rank
Range
Marking
O
70-140
ASO
Y
120-240
ASY
G
200-400
ASG
GUANGDONG HOTTECH
INDUSTRIAL CO., LTD
Page:P2-P1
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