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KNP3508A

Description
Drain-source voltage (Vdss): 80V Continuous drain current (Id) (at 25°C): 70A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 11mΩ @ 35A, 10V Maximum power dissipation (Ta=25°C):- Type: N-channel
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size219KB,6 Pages
ManufacturerKia Semiconductor Technology (shenzhen) Co., Ltd.
Websitehttp://www.kiaic.com/page/qiyejianjie.htm
Shenzhen Keyiya Semiconductor Technology Co., Ltd. is a national high-tech enterprise specializing in the development and design of medium and high power field effect transistors, fast recovery diodes, and three-terminal voltage regulators, integrating R&D, production and sales.
Download Datasheet Parametric View All

KNP3508A Overview

Drain-source voltage (Vdss): 80V Continuous drain current (Id) (at 25°C): 70A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 11mΩ @ 35A, 10V Maximum power dissipation (Ta=25°C):- Type: N-channel

KNP3508A Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)80V
Continuous drain current (Id) at 25°C70A(Tc)
Gate-source threshold voltage4V @ 250uA
Drain-source on-resistance11mΩ @ 35A,10V
Maximum power dissipation (Ta=25°C)-
typeN channel

KNP3508A Preview

Download Datasheet
KIA
SEMICONDUCTORS
70A,80V
N-CHANNEL MOSFET
3508A
1.
Features
n
n
n
n
R
DS(on)
=9.5mΩ(typ.)@ V
GS
=10V
100% avalanche tested
Reliable and rugged
Lead free and green device available(RoHS Compliant)
2.
Applications
n
n
Switching application
Power management for inverter systems
3.Symbol
Pin
1
2
3
4
Function
Gate
Drain
Source
Drain
1 of 6
Rev 1.0 Aug. 2018
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