KIA
SEMICONDUCTORS
80A 60V
N-CHANNEL MOSFET
KNX3306A
1.
Applications
n
n
Power supply
DC-DC converters
2.
Features
n
n
n
n
R DS(on) = 7mΩ(typ.) @V GS = 10 V
Lead free and Green device available
Low R
DS
-on
to minimize conductive loss
High avalanche current
3.
Pin configuration
Pin
1
2
3
4
Function
Gate
Drain
Source
Drain
1 of 6
Rev 1.0 Sep. 2018
KIA
SEMICONDUCTORS
80A 60V
N-CHANNEL MOSFET
KNX3306A
4.
Ordering Information
Part Number
KNP3306A
KNH3306A
Package
TO-220
TO-3P
Brand
KIA
KIA
5.Absolute
maximum ratings
(T
C
= 25ºC , unless otherwise specified)
Rating
Units
TO-220
TO-3P
60
V
±25
V
80
60
A
300
21.5
462.25
mJ
183
215
W
92
107.5
-55~+175
ºC
Parameter
Drain-source voltage
Gate-source voltage
Continuous Drain Current
Pulsed Drain Current
Avalanche Current
Avalanche Energy
Maximum Power Dissipation
T
C
=25
ºC
T
C
=100
ºC
T
C
=25
ºC
Symbol
V
DSS
V
GSS
I
D3
I
DP4
I
AS5
E
AS5
P
D
T
L
,T
STG
T
C
=25
ºC
T
C
=100
ºC
Junction & Storage Temperature Range
6.
Thermal characteristics
Symbol
R
θJC
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Typical
TO-220
TO-3P
0.68
0.58
62.5
Unit
ºC
/W
2 of 6
Rev 1.0 Sep. 2018
KIA
SEMICONDUCTORS
80A 60V
N-CHANNEL MOSFET
KNX3306A
7.
Electrical characteristics
(T
J
=25°C,unless otherwise specified)
Conditions
Min
Typ
Max Unit
V
GS
=0V,I
D
=250μA
V
DS
=48V,V
GS
=0V
T
J
=125
ºC
V
GS
=+25V,V
DS
=0V
V
GS
=-25V,V
DS
=0V
V
DS
=V
GS
, I
D
=250μA
V
GS
=10V,I
D
=30A
60
-
-
-
-
2.0
-
-
-
-
-
-
3.0
7
-
1
100
+100
-100
4.0
8.5
V
μA
μA
nA
nA
V
mΩ
Parameter
Static Characteristics
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
On characteristics
Gate threshold voltage
Drain-source on resistance
Dynamic Characteristics
2
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Repacitance
Total gate charge
Gate-source charge
Gate-drain charge
Resistve swiching characteristics
2
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Diode Characteristics
Diode Forward Voltage
Diode Continuous Forwardcurrent
Reverse recovery time
Reverse recovery charge
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)1
C
iss
C
oss
C
rss
R
G
Q
g
Q
gs
Q
gd
V
DS=
30V, I
D
=30A ,V
GS
=10V,
V
GS
=0V,V
DS=
0V,F=1.0MHz
V
DS
=25V,V
GS
=0V,f=1MHz
-
-
-
-
-
-
-
3390
371
258
1.8
73
18
22
-
-
-
-
-
-
-
nC
Ω
pF
t
d(ON)
t
rise
t
d(OFF)
t
fall
V
SD1
I
S3
t
rr
Q
rr
I
F
=30A,di/dt=100A/μs
V
DD
=30V,I
D
=30A,V
GS
=10V
R
G
=6.8Ω
-
-
-
-
18
120
55
68
-
-
-
-
ns
V
GS
=0V,I
SD
=20A
-
-
-
-
-
-
45
76
1.3
114
-
-
V
A
ns
nC
Note:
1: Pulse test; pulse width
≦
300us, duty cycle
≦
2%.
2: Guaranteed by design, not subject to production testing.
3: Calculated continuous current based on maximum allowable junction temperature. Package
limitation current is 55A.
4: Repetitive rating, pulse width limited by max junction temperature.
5:Starting T
J
=25
ºC,VD=50V,
L=0.5mH, I AS =43A.
3 of 6
Rev 1.0 Sep. 2018
8.
Typical Characteristics
PCB Design
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