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KIA7N65H

Description
Drain-source voltage (Vdss): 650V Continuous drain current (Id) (at 25°C): 7A Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 1.4Ω @ 3.5A, 10V Maximum power dissipation ( Ta=25°C): 48W Type: N channel N channel 7A 650V
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size391KB,6 Pages
ManufacturerKia Semiconductor Technology (shenzhen) Co., Ltd.
Websitehttp://www.kiaic.com/page/qiyejianjie.htm
Shenzhen Keyiya Semiconductor Technology Co., Ltd. is a national high-tech enterprise specializing in the development and design of medium and high power field effect transistors, fast recovery diodes, and three-terminal voltage regulators, integrating R&D, production and sales.
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KIA7N65H Overview

Drain-source voltage (Vdss): 650V Continuous drain current (Id) (at 25°C): 7A Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 1.4Ω @ 3.5A, 10V Maximum power dissipation ( Ta=25°C): 48W Type: N channel N channel 7A 650V

KIA7N65H Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)650V
Continuous drain current (Id) at 25°C7A
Gate-source threshold voltage4V @ 250uA
Drain-source on-resistance1.4Ω @ 3.5A,10V
Maximum power dissipation (Ta=25°C)48W
typeN channel

KIA7N65H Preview

Download Datasheet
KIA
SEMICONDUCTORS
7A,650V
N-CHANNEL MOSFET
7N65H
1.Description
The power MOSFET is produced using KIA semi’s advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance,provide superior
switching performance,and withstand high energy pulse in the avalanche and commutation mode.These
devices are well suited for high efficiency switched mode power supplies,active power factor correction
based on half bridge topology.
2.
Features
n
n
n
n
n
n
R
DS(on)
=1.2Ω @ V
GS
=10V
Low gate charge (typical 29nC)
High ruggedness
Fast switching
100% avalanche tested
Improved dv/dt capability
3.
Pin configuration
Pin
1
2
3
Function
Gate
Drain
Source
1 of 6
Rev 1.1 SEP 2014
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