KIA12N60HP datasheet, PDF - EEWORLD Datasheet

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KIA12N60HP: DescriptionDrain-source voltage (Vdss): 600V Continuous drain current (Id) (at 25°C): 12A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 650mΩ @ 6A, 10V Maximum power dissipation (Ta=25°C): 231W(Tc) Type: N channel N channel, 600V, 12A; CategoryDiscrete semiconductor MOS (field effect tube); File Size439KB，7 Pages; ManufacturerKia Semiconductor Technology (shenzhen) Co., Ltd.; Websitehttp://www.kiaic.com/page/qiyejianjie.htm; Shenzhen Keyiya Semiconductor Technology Co., Ltd. is a national high-tech enterprise specializing in the development and design of medium and high power field effect transistors, fast recovery diodes, and three-terminal voltage regulators, integrating R&D, production and sales.

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KIA12N60HP Overview

Drain-source voltage (Vdss): 600V Continuous drain current (Id) (at 25°C): 12A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 650mΩ @ 6A, 10V Maximum power dissipation (Ta=25°C): 231W(Tc) Type: N channel N channel, 600V, 12A

KIA12N60HP Parametric

Parameter Name	Attribute value
Drain-source voltage (Vdss)	600V
Continuous drain current (Id) at 25°C	12A(Tc)
Gate-source threshold voltage	4V @ 250uA
Drain-source on-resistance	650mΩ @ 6A,10V
Maximum power dissipation (Ta=25°C)	231W(Tc)
type	N channel

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