KBU401 datasheet, PDF - EEWORLD Datasheet

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KBU401: DescriptionSingle Phase 4.0A Silicon Bridge Rectifiers Single Phase 4.0A Silicon Bridge Rectifiers; CategoryDiscrete semiconductor diode; File Size290KB，2 Pages; ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.; Websitehttp://www.21yangjie.com/; Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.

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KBU401 Overview

Single Phase 4.0A Silicon Bridge Rectifiers Single Phase 4.0A Silicon Bridge Rectifiers

Features

Product Name: Single Phase 4.0A Silicon Bridge Rectifiers

Product model: KBU401

product features:

UL Recognized File # E-230084

Surge overload rating-200-300 amperes peak

Ideal for printed circuit boards

Reliable low cost construction utilizing molded plastic technique

Mounting Polsition:Any

Mounting Torgue:5 In.Ib.Max.

Maximum Ratings and Electrical Characteristics:

Rating at 25℃ ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

product data:

Maximum Repetitive Peak Reverse Voltage VRRM Maximum reverse peak voltage: 100V

Maximum RMS Voltage VRMS Voltage effective value: 70V

Maximum DC blocking Voltage VDC Maximum DC blocking voltage: 100V

Maximum Average Forward TC = 100℃ IF(AV) Maximum forward current: 4.0 A

Rectified Current at TA = 50℃ IF(AV) Maximum forward current: 4.0 A

Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Super imposed on Rated Load (JEDEC method ) IFSM Maximum forward surge current: 200 A

Maximum Instantaneous Forward Voltage @ 1.0A VF Maximum forward voltage drop: 1.1 V

Maximum Reverse Leakage at rated TA=25℃ IR Maximum reverse leakage current: 5μA

DC blocking voltage per leg TC = 100℃ IR Maximum reverse leakage current: 1mA

Operating and Storage Temperature Range TJ Operating Junction Temperature, TSTG Storage Temperature Range: -55 to +150 ℃

Package: KBU

KBU401 Parametric

Parameter Name	Attribute value
Maker	Yangzhou Yangjie Electronic Technology Co., Ltd.
Reach Compliance Code	unknown
Configuration	BRIDGE, 4 ELEMENTS
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1 V
Maximum non-repetitive peak forward current	200 A
Number of components	4
Maximum operating temperature	125 °C
Maximum output current	4 A
Maximum repetitive peak reverse voltage	50 V
surface mount	NO
Base Number Matches	1

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