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KBP308

Description
Single Phase 3.0A Silicon Bridge Rectifiers Single Phase 3.0A Silicon Bridge Rectifiers
CategoryDiscrete semiconductor    diode   
File Size258KB,2 Pages
ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.
Websitehttp://www.21yangjie.com/
Environmental Compliance
Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.
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KBP308 Overview

Single Phase 3.0A Silicon Bridge Rectifiers Single Phase 3.0A Silicon Bridge Rectifiers

Features

Product Name: Single Phase 3.0A Silicon Bridge Rectifiers


Product model: KBP308


product features:


UL Recognized File # E-230084



Ideal for printed circuit boards



Reliable low cost construction technique results in inexpensive product



High temperature soldering guaranteed:


250℃ / 10 seconds / 0.375” ( 9.5mm )


lead length at 5 lbs., ( 2.3 kg ) tension



Mechanical data:


Case: Molded plastic


Lead: solder plated


Polarity: As marked



Maximum Ratings and Electrical Characteristics:


Rating at 25℃ ambient temperature unless otherwise specified.


Single phase, half wave, 60 Hz, resistive or inductive load.


For capacitive load, derate current by 20%



product data:


Maximum Repetitive Peak Reverse Voltage VRRM Maximum reverse peak voltage: 800V



Maximum RMS Voltage VRMS Voltage effective value: 560V



Maximum DC blocking Voltage VDC Maximum DC blocking voltage: 800V



Maximum Average Forward Rectified Current @TA = 50℃ I(AV) Maximum forward current: 3.0A



Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) IFSM Maximum forward surge current: 80 A



Maximum Instantaneous Forward Voltage @ 3.0 A VF Maximum forward voltage drop: 1.1 V



Maximum DC Reverse Current @ TA=25℃ IR Maximum reverse leakage current: 10μA


rated DC blocking voltage per leg TA=125℃ IR Maximum reverse leakage current: 500μA



Typical Thermal Resistance (Note) RθJA Thermal resistance coefficient: 30℃/W ; RθJL Thermal resistance coefficient: 11℃/W



Operating Temperature Range TJ Operating Junction Temperature: -55 to +150 ℃



Storage Temperature Range TSTG Storage Temperature Range: -55 to +150 ℃



Package: KBP


KBP308 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerYangzhou Yangjie Electronic Technology Co., Ltd.
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationBRIDGE, 4 ELEMENTS
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
Maximum non-repetitive peak forward current80 A
Number of components4
Maximum operating temperature150 °C
Maximum output current3 A
Maximum repetitive peak reverse voltage800 V
surface mountNO
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