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KBP208_B0_10001

Description
Reverse peak voltage: 800V Average rectified current (Io): 2A Forward voltage drop (Vf): 1.1V @ 2A VR=800V IO=2A VF=1.1V@2A
CategoryDiscrete semiconductor    Rectifier bridge   
File Size149KB,4 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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KBP208_B0_10001 Overview

Reverse peak voltage: 800V Average rectified current (Io): 2A Forward voltage drop (Vf): 1.1V @ 2A VR=800V IO=2A VF=1.1V@2A

KBP208_B0_10001 Parametric

Parameter NameAttribute value
Reverse peak voltage800V
Average rectified current (Io)2A
Forward voltage drop (Vf)1.1V @ 2A

KBP208_B0_10001 Preview

Download Datasheet
...KBP204~KBP2010
Glass Passivated Bridge Rectifiers
VOLTAGE
400 to 1000 Volt
CURRENT
FEATURES
• UL Recognized File #E228882
• Plastic material has Underwriters Laboratory
Flammability Classification 94V-O
• Ideal for printed circuit board
• Reliable low cost construction utilizing molded plastic technique.
• Lead free in compliance with EU RoHS2.0 (2011/65/EU & 2015/865/EU
directive)
•Glass passivated chip junction
2 Ampere
KBPF
Unit: Inch(mm)
MECHANICAL DATA
• Case: KBPF
•Terminals: Leads solderable per MIL-STD-750, Method 2026
• Polarity: As marked on body
• Weight: 1.6g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25°
Cambient temperature unless otherwise specified.
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current,
8.3 ms single half sine-wave
Rating of fusing ( t<8.3ms) (Note1)
Maximum instantaneous forward
voltage per diode
I
F
= 1 A
I
F
= 2 A
Maximum reverse current
@ rated V
R
T
J
=25°
C
T
J
=125°
C
SYMBOL
V
RRM
V
RMS
V
DC
KBP
204
400
280
400
KBP
206
600
420
600
2
60
15
1
1.1
5
500
C
J
R
θJA
R
θJC
T
J
T
STG
23
20
5
- 55 to +150
- 55 to +150
pF
°
C/W
°
C
°
C
KBP
208
800
560
800
KBP
2010
1000
700
1000
UNIT
V
V
V
A
A
I
F(AV)
I
FSM
It
V
F
2
A
s
V
2
I
R
μA
Typical junction capacitance (Note2)
Typical thermal resistance (Note3)
Operating junction temperature range
Storage temperature range
Note 1: Non-repetitive, for t>1ms and<8.3ms.
Note 2: Measured at 1MHz and applied Reverse bias of 4V DC
Note 3: Thermal resistance from junction to ambient and from junction to case mounted on PCB
March 13,2017-REV.07
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