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KBJ1010

CategoryDiscrete semiconductor    Rectifier bridge   
File Size233KB,2 Pages
ManufacturerChongqing Pingwei Enterprise co.,Ltd.
Websitehttp://www.perfectway.cn
Chongqing Pingwei Industrial Co., Ltd. is a power semiconductor IDM product company integrating chip design, packaging and testing, application and reliability testing services. The company takes power semiconductor devices as its industrial foundation, and has established product development, manufacturing and testing platforms for smart terminals, industrial control, Internet of Things, new energy vehicles, 5G communications, home appliances, satellite Internet, security electronics, green lighting and other market fields, providing high-reliability medium, low voltage and high voltage power devices, modules and other products and system solutions, always putting user needs first. Specializing in the production of various types of semiconductor devices (rectifier diodes, fast recovery diodes, TVS, Zener diodes, Schottky, rectifier bridges, MOSFET, IGBT, synchronous rectifier devices, SIC and GaN devices, etc.).
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KBJ10005 THRU KBJ1010
SINGLE PHASE10.0AMPS.GLASS PASSIVATED BRIDGE RECTIFIERS
FEATURE
.Ideal
for printed circuit board
.Glass
passivated chip junctions
.High
case dielectric strength
.Low
leakage
.Low
forward voltage
.High
surge current capability
.High
temperature soldering guaranteed:
260℃/10seconds/.375”,(9.5mm) lead lengths.
.996(25.3)
.972(24.7)
KBJ
.382(9.7)
.366(9.3)
.157(4.0)
.189(4.8)
.173(4.4)
.150(3.8)
.134(3.4)
.134(3.4)
.122(3.1)
.114(2.9)
.098(2.5)
.031(0.8)
.023(0.6)
MECHANICAL DATA
.Case:
Molded plastic body
.Epoxy:
UL 94V-0 rate flame retardant
.Terminals:
Pure tin plated, Lead free. Leads solderable
per MIL-STD-750, Method 2026.
.Polarity:
Symbols molded or marked on body
.Mounting
position: Any
.057(1.45)
.041(1.05)
.083(2.1)
.069(1.7)
.074(1.9)
.059(1.5)
.074(1.9)
.035(0.9)
.303(7.7)
SPACING
.287(7.3)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz,resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC blocking Voltage
Maximum Average Forward rectified Output
Current at T
C
=90°C
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rate load (JEDEC
method)
Maximum Forward Voltage Drop per element
at 10.0A DC
Maximum DC Reverse Current @T
A
=25°C
at rated DC blocking voltage
I
2
t Rating for Fusing (t﹤8.3ms)
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Storage Temperature
Operating Junction Temperature
@T
A
=125°C
SYM
BOL
KBJ
10005
50
35
50
KBJ
1001
100
70
100
KBJ
1002
200
140
200
KBJ
1004
400
280
400
10.0
.146(3.7)
.130(3.3)
.708(19.0)
.669(17.0)
.602(15.3)
.578(14.7)
KBJ
1006
600
420
600
KBJ
1008
800
560
800
KBJ
1010
1000
700
1000
units
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
I
2
t
C
J
R
(JC)
T
STG
T
J
175
A
1.1
10.0
500.0
127
55
2.5
-55 to +150
-55 to +150
V
μA
A
2
Sec
pF
°C/W
°C
°C
Note:
1. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc
2.Thermal Resistance from Junction to case per element units mounted on 30.0×30.0×1.6mm Aluminum plate heat-sink.
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