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HS2KA

Description
High Efficient Rectifier High Efficiency Rectifier Diode
CategoryDiscrete semiconductor    diode   
File Size137KB,2 Pages
ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.
Websitehttp://www.21yangjie.com/
Environmental Compliance
Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.
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HS2KA Overview

High Efficient Rectifier High Efficiency Rectifier Diode

Features

Product Name: High Efficient Rectifier High Efficiency Rectifier Diode


Product model: HS2KA


product features:


I:2.0A


VRRM :50V-1000V


High forward surge current capability


High surge current capability


Package: Molded plastic


Cases: Molded plastic



use:


Rectifier



product data:


Repetitive Peak Reverse Voltage VRRM Reverse repetitive peak voltage: 800V



Average Forward Current IF(AV) Average forward current: 2.0A



Surge(Non-repetitive)Forward Current IFSM Forward (non-repetitive) surge current: 50A



Junction Temperature TJ :-55 to +150 ℃



Storage Temperature TSTG storage temperature: -55 to +150 ℃



Peak Forward Voltage (IFM=2.0A) VFM Forward peak voltage: 1.7V



Peak Reverse Current (VRM=VRRM) IRRM1 (Ta=25℃) Reverse peak current: 5.0μA


IRRM2 (Ta=125℃) Reverse peak current: 100μA



Reverse Recovery time (IF=0.5A, IR=1A, IRR=0.25A) trr Reverse recovery time: 75ns



Thermal Resistance (Typical) RθJ-A Thermal resistance (typical): 80 ℃/W; RθJ-L Thermal resistance (typical): 20 ℃/W



Package: DO-214AC (SMA)


HS2KA Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerYangzhou Yangjie Electronic Technology Co., Ltd.
Reach Compliance Codecompli
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.7 V
Maximum non-repetitive peak forward current50 A
Number of components1
Maximum operating temperature150 °C
Maximum output current2 A
Maximum repetitive peak reverse voltage800 V
Maximum reverse recovery time0.075 µs
surface mountYES
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