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HMJE13003D

Description
400V 1.5A NPN epitaxial planar transistor
CategoryDiscrete semiconductor   
File Size51KB,5 Pages
ManufacturerHI-SINCERITY MICROELECTRONICS CORP.
Download Datasheet View All

HMJE13003D Overview

400V 1.5A NPN epitaxial planar transistor

Features

Product Name: 400V 1.5A NPN Epitaxial Planar Transistor


Product model: HMJE13003D


product features:


High voltage, High Speed Power Switch


Switch Regulators


PWM Inverters and Motor Controls


Solenoid and Relay Drivers


Deflection Circuits



parameter:


Type: NPN


BVCEO: 400V


IC: 1.5A


PD: 40W


hFE: MIN 8


hFE: Max. 40


VCE(sat): Max. 0.5V


RoHS: PF(lead-free)


Package: TO-126ML


HMJE13003D Preview

Download Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HD200207
Issued Date : 1993.04.12
Revised Date : 2007.09.04
Page No. : 1/5
HMJE13003D
NPN EPITAXIAL PLANAR TRANSISTOR
Description
High Voltage, High Speed Power Switch
Switch Regulators
PWM Inverters and Motor Controls
Solenoid and Relay Drivers
Deflection Circuits
TO-126ML
Absolute Maximum Ratings
(T
A
=25°C)
Maximum Temperatures
Storage Temperature.............................................................................................................................................. -50 ~ +150
°C
Junction Temperature ........................................................................................................................................ 150
°C
Maximum
Maximum Power Dissipation
Total Power Dissipation (T
C
=25°C)....................................................................................................................................... 40 W
Maximum Voltages and Currents (T
A
=25°C)
V
CBO
Collector to Base Voltage............................................................................................................................................ 700 V
V
CEO
Collector to Emitter Voltage ........................................................................................................................................ 400 V
V
EBO
Emitter to Base Voltage................................................................................................................................................... 9 V
I
C
Collector Current (Continuous) ......................................................................................................................................... 1.5 A
I
B
Base Current (Continuous) ............................................................................................................................................. 0.75 A
Electrical Characteristics
(T
A
=25°C)
Characteristic
Breakdown Collector-Base Voltage
Breakdown Collector-Emitter Voltage
Emitter Cut-off Current
Collector Cut-off Current
Symbol
BV
CBO
BV
CEO
I
EBO
I
CEX
*V
CE(sat)1
Collector-Emitter Saturation Voltage
*V
CE(sat)2
*V
CE(sat)3
Base-Emitter Saturation Voltage
*V
BE(sat)
*V
BE(sat)
DC Current Gain
*h
FE1
*h
FE2
Min.
700
400
-
-
-
-
-
-
-
8
5
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
1
1
500
1
3
1
1.2
40
25
Unit
V
V
mA
mA
mV
V
V
V
V
I
C
=1mA
I
C
=10mA
V
EB
=9V
V
CE
=700V, V
BE(off)
=1.5V
I
C
=0.5A, I
B
=0.1A
I
C
=1A, I
B
=0.25A
I
C
=1.5A, I
B
=0.5A
I
C
=0.5A, I
B
=0.1A
I
C
=1A, I
B
=0.25A
I
C
=0.3A, V
CE
=5V
I
C
=1A, V
CE
=5V
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
Test Conditions
HMJE13003D
HSMC Product Specification
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