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HMBT2907A

Description
-60V -0.6A PNP epitaxial planar transistor
CategoryDiscrete semiconductor   
File Size38KB,4 Pages
ManufacturerHI-SINCERITY MICROELECTRONICS CORP.
Download Datasheet View All

HMBT2907A Overview

-60V -0.6A PNP epitaxial planar transistor

Features

Product Name: -60V -0.6A PNP Epitaxial Planar Transistor


Product model: HMBT2907A


Product Description:


The HMBT2907A is designed for general purpose amplifier and high-speed switching, medium power switching applications.



product features:


Low Collector Saturation Voltage


High Speed Switching Transistor


For Complementary Use With NPN Type HMBT2222A



parameter:


Type: PNP


BVCEO: -60V


IC: -0.6A


PD: 0.225W


hFE: MIN 100


hFE: Max. 300


VCE(sat): Max.-0. 4V


RoHS: PF(lead-free), HF(halogen-free)


Package: SOT-23

HMBT2907A Preview

Download Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6821
Issued Date : 1993.06.23
Revised Date : 2004.08.30
Page No. : 1/4
HMBT2907A
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HMBT2907A is designed for general purpose amplifier and high -speed
switching, medium power switching applications.
Features
Low Collector Saturation Voltage
High Speed Switching
For Complementary Use With NPN Type HMBT2222A
SOT-23
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature........................................................................................................................... -55 ~ +150
°C
Junction Temperature.................................................................................................................................... +150
°C
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) .............................................................................................................. 225 mW
Maximum Voltages and Currents (Ta=25°C)
V
CBO
Collector to Base Voltage .......................................................................................................................... -60 V
V
CEO
Collector to Emitter Voltage....................................................................................................................... -60 V
V
EBO
Emitter to Base Voltage ............................................................................................................................... -5 V
I
C
Collector Current ....................................................................................................................................... -600 mA
Electrical Characteristics
(Ta=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CEX
*V
CE(sat)1
*V
CE(sat)2
*V
BE(sat)1
*V
BE(sat)2
*h
FE1
*h
FE2
*h
FE3
*h
FE4
*h
FE5
f
T
Cob
Min.
-60
-60
-5
-
-
-
-
-
-
75
100
100
100
50
200
-
Typ.
-
-
-
-
-
-0.2
-0.5
-
-
-
-
-
180
-
-
-
Max.
-
-
-
-10
-50
-0.4
-1.6
-1.3
-2.6
-
-
-
300
-
-
8
MHz
pF
Unit
V
V
V
nA
nA
V
V
V
V
I
C
=-10uA
I
C
=-10mA
I
C
=-10uA
V
CB
=-50V
V
CE
=-30V, V
BE
=-0.5V
I
C
=-150mA, I
B
=-15mA
I
C
=-500mA, I
B
=-50mA
I
C
=-150mA, I
B
=-15mA
I
C
=-500mA, I
B
=-50mA
V
CE
=-10V, I
C
=-100uA
V
CE
=-10V, I
C
=-1mA
V
CE
=-10V, I
C
=-10mA
V
CE
=-10V, I
C
=-150mA
V
CE
=-10V, I
C
=-500mA
V
CB
=-20V, I
C
=-50mA, f=100MHz
V
CB
=-10V, f=1MHz
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
Test Conditions
HMBT2907A
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