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HM4033

Description
-80V -1A PNP epitaxial planar transistor
CategoryDiscrete semiconductor   
File Size36KB,4 Pages
ManufacturerHI-SINCERITY MICROELECTRONICS CORP.
Download Datasheet View All

HM4033 Overview

-80V -1A PNP epitaxial planar transistor

Features

Product Name: -80V -1A PNP Epitaxial Planar Transistor


Product model: HM4033


Product Description:


The HM4033 is designed for high current general purpose amplifier applications.





parameter:


Type: PNP


BVCEO: -80V


IC: -1A


PD: 1W


hFE: MIN 100


hFE: Max. -


VCE(sat): Max. -0.5V


RoHS: PF(lead-free)


Package: SOT-89


HM4033 Preview

Download Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9523
Issued Date : 1997.04.17
Revised Date : 2005.06.30
Page No. : 1/4
HM4033
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HM4033 is designed for high current general purpose amplifier applications.
Absolute Maximum Ratings
SOT-89
Maximum Temperatures
Storage Temperature ........................................................................................................................... -55 ~ +150
°C
Junction Temperature ................................................................................................................... +150
°C
Maximum
Maximum Power Dissipation
Total Power Dissipation (T
A
=25°C) ...................................................................................................................... 1 W
Maximum Voltages and Currents (T
A
=25°C)
V
CBO
Collector to Base Voltage .......................................................................................................................... -80 V
V
CEO
Collector to Emitter Voltage ....................................................................................................................... -80 V
V
EBO
Emitter to Base Voltage ............................................................................................................................... -5 V
I
C
Collector Current ............................................................................................................................................. -1 A
Electrical Characteristics
(T
A
=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)1
*V
CE(sat)2
*V
BE(sat)1
*V
BE(sat)2
*h
FE1
*h
FE2
*h
FE3
*h
FE4
f
T
Cob
Min.
-80
-80
-5
-
-
-
-
-
-
75
100
70
25
100
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-100
-100
-150
-500
-900
-1.1
-
-
-
-
-
20
MHz
pF
Unit
V
V
V
nA
nA
mV
mV
mV
V
I
C
=-10uA, I
E
=0
I
C
=-10mA, I
B
=0
I
C
=-10uA, I
C
=0
V
CB
=-60V, I
E
=0
V
EB
=-5V, I
C
=0
I
C
=-150mA, I
B
=-15mA
I
C
=-500mA, I
B
=-50mA
I
C
=-150mA, I
B
=-15mA
I
C
=-500mA, I
B
=-50mA
V
CE
=-5V, I
C
=-0.1mA
V
CE
=-5V, I
C
=-100mA
V
CE
=-5V, I
C
=-500mA
V
CE
=-5V, I
C
=-1A
V
CE
=-10V, I
C
=-50mA, f=100MHz
V
CB
=-10V, I
E
=0, f=1MHz
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
Test Conditions
HM4033
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