HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6008
Issued Date : 1996.04.12
Revised Date : 2002.04.18
Page No. : 1/3
HJ350
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HJ350 is designed for line operated audio output amplifier,
switch mode power supply drivers and other switching applications.
Absolute Maximum Ratings
(Ta=25°C)
TO-252
•
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature .................................................................................................... +150
°C
•
Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) ..................................................................................... 15 W
•
Maximum Voltages and Currents
BVCBO Collector to Base Voltage.................................................................................... -300 V
BVCEO Collector to Emitter Voltage................................................................................. -300 V
BVEBO Emitter to Base Voltage........................................................................................... -3 V
IC Collector Current....................................................................................................... -500 mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*hFE
Min.
-300
-300
-3
-
-
30
Typ.
-
-
-
-
Max.
-
-
-
-100
-100
240
Unit
V
V
V
uA
uA
Test Conditions
IC=-100uA, IE=0
IC=-1mA, IB=0
IE=-0.1mA, IC=0
VCB=-300V, IE=0
VEB=-3V, IC=0
VCE=-10V, IC=-50mA
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
HJ350
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
1000
hFE @ V
CE
=10V
1000
V
CE(sat)
@ I
C
=10I
B
o
Spec. No. : HE6008
Issued Date : 1996.04.12
Revised Date : 2002.04.18
Page No. : 2/3
Saturation Voltage & Collector Current
75 C
125 C
o
Saturation Voltage (mV)
75 C
100
125 C
o
o
o
hFE
100
25 C
o
25 C
10
0.1
1
10
100
1000
10
0.1
1
10
100
1000
Collector Current-I
C
(mA)
Collector Current-I
C
(mA)
HJ350
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TO-252 Dimension
A
C
Spec. No. : HE6008
Issued Date : 1996.04.12
Revised Date : 2002.04.18
Page No. : 3/3
Marking:
H
3 5 0
Date Code
J
B
D
Control Code
L
F
G
Style: Pin 1.Base 2.Collector 3.Emitter
3
H
E
K
2
I
1
J
3-Lead TO-252 Plastic Surface Mount Package
HSMC Package Code: J
*: Typical
DIM
A
B
C
D
E
F
Inches
Min.
Max.
0.0177 0.0217
0.0650 0.0768
0.0354 0.0591
0.0177 0.0236
0.2520 0.2677
0.2125 0.2283
Millimeters
Min.
Max.
0.45
0.55
1.65
1.95
0.90
1.50
0.45
0.60
6.40
6.80
5.40
5.80
DIM
G
H
I
J
K
L
Inches
Min.
Max.
0.0866 0.1102
-
*0.0906
-
0.0354
-
0.0315
0.2047 0.2165
0.0551 0.0630
Millimeters
Min.
Max.
2.20
2.80
-
*2.30
-
0.90
-
0.80
5.20
5.50
1.40
1.60
Notes:
1.Dimension and tolerance based on our Spec. dated May. 05,1996.
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
•
Lead: 42 Alloy; solder plating
•
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
•
HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
•
Head Office
(Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
•
Factory 1:
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HJ350
HSMC Product Specification