Guangdong Huaguan Semiconductor Co., Ltd. was established in 2011. It is a quasi-high-tech enterprise specializing in the research and development, packaging, testing and sales of semiconductor devices. The company has an internationally advanced level of semiconductor discrete devices and integrated circuit packaging and testing production lines, and a technical team with rich experience in the design, packaging and testing of semiconductor devices. It has established long-term strategic cooperative relations with first-class companies in the same industry, and has formed a professional technical development team to engage in the development of new products and new technologies. The company's R&D project products include power management, operational amplifiers, audio amplifiers, interfaces and drivers, logic devices, memory, time base and clock, data acquisition, MOSFT and special circuits, which are mainly used in automotive electronics, instrumentation, network communications, industrial automation, LED lighting, switching power supplies, smart home appliances, gold card projects, smart transportation and other fields. Huaguan products are positioned as high-end quality, and have been well received by users in recent years. It is currently a high-end quality brand in the industry; HGSEMI&HGC is Huaguan's own brand. The establishment of an independent brand is more conducive to our service to customers, promoting the development of the company, and becoming a leading manufacturer in China's semiconductor industry.
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
ESD Tolerance (Note 2)
Machine Model
Human Body Model
Differential Input Voltage
Supply Voltage (V
+
–V
−
)
Output Short Circuit to V
+
Output Short Circuit to V
−
Mounting Temperture
Infrared or Convection (20 sec)
Wave Soldering Lead Temp (10
sec)
235˚C
260˚C
200V
2000V
Operating Ratings
(Note 1)
Supply Voltage
Temperature Range
Thermal Resistance (θ
JA
)
SC70-5 Package
8-Pin MSOP
8-Pin SOIC
14-Pin TSSOP
440 ˚C/W
235˚C/W
190˚C/W
155˚C/W
2.7V to 5.5V
−40˚C to 125˚C
±
Supply Voltage
5.5V
(Note 3)
(Note 4)
(Note 13)
Unless otherwise specified, all limits guaranteed for T
J
= 25˚C. V
+
= 2.7V, V
R
L
>
1MΩ.
Boldface
limits apply at the temperature extremes.
Symbol
V
OS
Parameter
Input Offset Voltage
HGV771
HGV772/HGV774
TCV
OS
I
B
I
OS
I
S
CMRR
PSSR
V
CM
A
V
Input Offset Voltage Average
Drift
Input Bias Current (Note 8)
Input Offset Current (Note 8)
Supply Current (Per Amplifier)
Common Mode Rejection Ratio
Power Supply Rejection Ratio
Input Common-Mode Voltage
Range
Large Signal Voltage Gain
(Note 9)
0.5
≤
V
CM
≤
1.2V
2.7V
≤
V
+
≤
5V
For CMRR
≥
50dB
R
L
= 600Ω to 1.35V,
V
O
= 0.2V to 2.5V, (Note 10)
R
L
= 2kΩ to 1.35V,
V
O
= 0.2V to 2.5V, (Note 11)
V
O
Output Swing
R
L
= 600Ω to 1.35V
V
IN
=
±
100mV, (Note 10)
R
L
= 2kΩ to 1.35V
V
IN
=
±
100mV, (Note 11)
I
O
Output Short Circuit Current
Sourcing, V
O
= 0V
V
IN
= 100mV
Sinking, V
O
= 2.7V
V
IN
= −100mV
Condition
2.7V DC Electrical Characteristics
−
= 0V, V
CM
= V
+
/2, V
O
= V
+
/2 and
Min
(Note 7)
Typ
(Note 6)
0.3
0.3
−0.45
−0.1
0.004
550
74
72
82
76
0
92
80
98
86
0.11
0.14
0.05
0.06
18
11
18
11
100
100
0.084 to
2.62
0.026 to
2.68
24
22
mA
2.59
2.56
2.65
2.64
dB
80
90
1.8
100
100
900
910
Max
(Note 7)
0.85
1.0
1.0
1.2
Units
mV
µV/˚C
pA
pA
µA
dB
dB
V
V
http://www.hgsemi.com.cn
2
2018 JUN
HGV771-2-4
(Note 13)
Unless otherwise specified, all limits guaranteed for T
J
= 25˚C. V
+
= 5.0V, V
Boldface
limits apply at the temperature extremes.
Symbol
SR
GBW
Φ
m
G
m
e
n
e
n
i
n
THD
Slew Rate
Gain-Bandwidth Product
Phase Margin
Gain Margin
Input-Referred Voltage Noise
(Flatband)
Input-Referred Voltage Noise
(l/f)
Input-Referred Current Noise
Total Harmonic Distortion
f = 10kHz
f = 100Hz
f = 1kHz
f = 1kHz, A
V
= +1
R
L
= 600Ω, V
IN
= 1 V
PP
Parameter
(Note 12)
Conditions
2.7V AC Electrical Characteristics
−
= 0V, V
CM
= V
+
/2, V
O
= V
+
/2 and R
L
>
1MΩ.
Min
(Note 7)
Typ
(Note 6)
1.4
3.5
79
−15
7.5
12.5
0.001
0.007
Max
(Note 7)
Units
V/µs
MHz
Deg
dB
nV/
nV/
pA/
%
(Note 13)
Unless otherwise specified, all limits guaranteed for T
J
= 25˚C. V
+
= 5.0V, V
R
L
>
1MΩ.
Boldface
limits apply at the temperature extremes.
Symbol
V
OS
Parameter
Input Offset Voltage
HGV771
HGV772/HGV774
TCV
OS
I
B
I
OS
I
S
CMRR
PSRR
V
CM
A
V
Input Offset Voltage Average
Drift
Input Bias Current (Note 8)
Input Offset Current (Note 8)
Supply Current (Per Amplifier)
Common Mode Rejection Ratio
Power Supply Rejection Ratio
Input Common-Mode Voltage
Range
Large Signal Voltage Gain
(Note 9)
0.5
≤
V
CM
≤
3.5V
2.7V
≤
V
+
≤
5V
For CMRR
≥
50dB
R
L
= 600Ω to 2.5V,
V
O
= 0.2V to 4.8V, (Note 10)
R
L
= 2kΩ to 2.5V,
V
O
= 0.2V to 4.8V, (Note 11)
V
O
Output Swing
R
L
= 600Ω to 2.5V
V
IN
=
±
100mV, (Note 10)
R
L
= 2kΩ to 2.5V
V
IN
=
±
100mV, (Note 11)
I
O
Output Short Circuit Current
(Note 8),(Note 14)
Sourcing, V
O
= 0V
V
IN
= 100mV
Sinking, V
O
= 2.7V
V
IN
= −100mV
Condition
5.0V DC Electrical Characteristics
−
= 0V, V
CM
= V
+
/2, V
O
= V
+
/2 and
Min
(Note 7)
Typ
(Note 6)
0.25
0.25
−0.35
−0.23
0.017
600
80
79
82
76
0
92
89
98
95
0.15
0.23
0.06
0.07
35
35
35
35
100
100
0.112 to
4.9
0.035 to
4.97
75
66
mA
4.85
4.77
4.94
4.93
dB
90
90
4.1
100
100
950
960
Max
(Note 7)
0.85
1.0
1.0
1.2
Units
mV
µV/˚C
pA
pA
µA
dB
dB
V
V
http://www.hgsemi.com.cn
3
2018 JUN
HGV771-2-4
(Note 13)
Unless otherwise specified, all limits guaranteed for T
J
= 25˚C. V
+
= 5.0V, V
Boldface
limits apply at the temperature extremes.
Symbol
SR
GBW
Φ
m
G
m
e
n
e
n
i
n
THD
Slew Rate
Gain-Bandwidth Product
Phase Margin
Gain Margin
Input-Referred Voltage Noise
(Flatband)
Input-Referred Voltage Noise
(l/f)
Input-Referred Current Noise
Total Harmonic Distortion
f = 10kHz
f = 100Hz
f = 1kHz
f = 1kHz, A
V
= +1
R
L
= 600Ω, V
IN
= 1 V
PP
Parameter
(Note 12)
Conditions
5.0V AC Electrical Characteristics
−
= 0V, V
CM
= V
+
/2, V
O
= V
+
/2 and R
L
>
1MΩ.
Min
(Note 7)
Typ
(Note 6)
1.4
3.5
79
−15
6.5
12
0.001
0.007
Max
(Note 7)
Units
V/µs
MHz
Deg
dB
nV/
nV/
pA/
%
Note 1:
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test conditions, see the Electrical Characteristics.
Note 2:
Human body model, 1.5kΩ in series with 100pF. Machine model, 0Ω in series with 20pF.
Note 3:
Shorting output to V
+
will adversely affect reliability.
Note 4:
Shorting output to V
−
will adversely affect reliability.
Note 5:
The maximum power dissipation is a function of T
J(MAX)
,
θ
JA
, and T
A
. The maximum allowable power dissipation at any ambient temperature is
P
D
= (T
J(MAX)
–T
A
)/θ
JA
. All numbers apply for packages soldered directly into a PC board.
Note 6:
Typical Values represent the most likely parametric norm.
Note 7:
All limits are guaranteed by testing or statistical analysis.
Note 8:
Limits guaranteed by design.
Note 9:
R
L
is connected to mid-supply. The output voltage is set at 200mV from the rails. V
O
= GND + 0.2V and V
O
= V
+
−0.2V
Note 10:
For HGV772/HGV774, temperature limits apply to −40˚C to 85˚C.
Note 11:
For HGV772/HGV774, temperature limits apply to −40˚C to 85˚C. If R
L
is relaxed to 10kΩ, then for HGV772/HGV774 temperature limits apply to −40˚C to
125˚C.
Note 12:
Connected as voltage follower with 2V
PP
step input. Number specified is the slower of positive and negative slew rates.
Note 13:
Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating
of the device such that T
J
= T
A
. No guarantee of parametric performance is indicated in the electrical tables under the conditions of internal self-heating where T
J
>
T
A
. Absolute Maximum Rating indicated junction temperature limits beyond which the device may be permanently degraded, either mechanically or electrically.
Note 14:
Continuous operation of the device with an output short circuit current larger than 35mA may cause permanent damage to the device.
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