HER104 datasheet, PDF - EEWORLD Datasheet

HER104: DescriptionHigh Efficient Rectifier High Efficiency Rectifier Diode; CategoryDiscrete semiconductor diode; File Size500KB，2 Pages; ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.; Websitehttp://www.21yangjie.com/; Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.

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High Efficient Rectifier High Efficiency Rectifier Diode

Features

Product Name: High Efficient Rectifier High Efficiency Rectifier Diode

Product model: HER104

product features:

Io: 1.0A

VRRM: 50V-1000V

High forward surge current capability

High surge current capability

use:

Rectifier

product data:

Repetitive Peak Reverse Voltage VRRM Reverse repetitive peak voltage: 300V

Average Forward Current IF(AV) Average forward current: 1.0A

Surge(Non-repetitive)Forward Current IFSM Forward (non-repetitive) surge current: 30A

Junction Temperature TJ Junction temperature: -55 to +125 ℃

Storage Temperature TSTG storage temperature: -55 to +150 ℃

Peak Forward Voltage (IFM=6.0A) VFM Forward peak voltage: 1.3V

Peak Reverse Current (VRM=VRRM) IRRM1 (Ta=25℃) Reverse peak current: 5μA

IRRM2 (Ta=125℃) Reverse peak current: 50μA

Reverse Recovery time (IF=0.5A, IR=1A, IRR=0.25A) trr Reverse recovery time: 50ns

Thermal Resistance (Typical) RθJ-A Thermal resistance (typical) : 55 ℃/W ; RθJ-L Thermal resistance (typical) : 25 ℃/W

Package: DO-204AL (DO-41)

Parameter Name	Attribute value
Maker	Yangzhou Yangjie Electronic Technology Co., Ltd.
package instruction	O-PALF-W2
Reach Compliance Code	unknown
Other features	HIGH RELIABILITY
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1 V
JEDEC-95 code	DO-41
JESD-30 code	O-PALF-W2
Maximum non-repetitive peak forward current	30 A
Number of components	1
Number of terminals	2
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
Maximum output current	1 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Maximum repetitive peak reverse voltage	300 V
Maximum reverse recovery time	0.05 µs
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL
Base Number Matches	1

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