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MBN1200E33E

Description
Insulated Gate Bipolar Transistor, 1200A I(C), 3300V V(BR)CES
CategoryDiscrete semiconductor    The transistor   
File Size284KB,9 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
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MBN1200E33E Overview

Insulated Gate Bipolar Transistor, 1200A I(C), 3300V V(BR)CES

MBN1200E33E Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instruction,
Reach Compliance Codeunknown
Is SamacsysN
Maximum collector current (IC)1200 A
Collector-emitter maximum voltage3300 V
Gate-emitter maximum voltage20 V
Number of components1
Maximum operating temperature125 °C
Base Number Matches1

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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