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HER103

Description
High Efficient Rectifier High Efficiency Rectifier Diode
CategoryDiscrete semiconductor    diode   
File Size129KB,2 Pages
ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.
Websitehttp://www.21yangjie.com/
Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.
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HER103 Overview

High Efficient Rectifier High Efficiency Rectifier Diode

Features

Product Name: High Efficient Rectifier High Efficiency Rectifier Diode


Product model: HER103


product features:


Io: 1.0A


VRRM: 50V-1000V


High forward surge current capability


High surge current capability



use:


Rectifier



product data:


Repetitive Peak Reverse Voltage VRRM Reverse repetitive peak voltage: 200V



Average Forward Current IF(AV) Average forward current: 1.0A



Surge(Non-repetitive)Forward Current IFSM Forward (non-repetitive) surge current: 30A



Junction Temperature TJ Junction temperature: -55 to +125 ℃



Storage Temperature TSTG storage temperature: -55 to +150 ℃



Peak Forward Voltage (IFM=6.0A) VFM Forward peak voltage: 1.0V



Peak Reverse Current (VRM=VRRM) IRRM1 (Ta=25℃) Reverse peak current: 5μA


IRRM2 (Ta=125℃) Reverse peak current: 50μA



Reverse Recovery time (IF=0.5A, IR=1A, IRR=0.25A) trr Reverse recovery time: 50ns



Thermal Resistance (Typical) RθJ-A Thermal resistance (typical) : 55 ℃/W ; RθJ-L Thermal resistance (typical) : 25 ℃/W



Package: DO-204AL (DO-41)








HER103 Parametric

Parameter NameAttribute value
MakerYangzhou Yangjie Electronic Technology Co., Ltd.
Reach Compliance Codeunknown
Is SamacsysN
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
Maximum non-repetitive peak forward current30 A
Number of components1
Maximum operating temperature125 °C
Maximum output current1 A
Maximum repetitive peak reverse voltage200 V
Maximum reverse recovery time0.05 µs
surface mountNO
Base Number Matches1
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