H1GF2 datasheet, PDF - EEWORLD Datasheet

H1GF2: DescriptionRectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon,; CategoryDiscrete semiconductor diode; File Size452KB，5 Pages; ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.; Websitehttp://www.21yangjie.com/; Environmental Compliance; Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.

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H1GF2 Overview

Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon,

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Yangzhou Yangjie Electronic Technology Co., Ltd.
package instruction	R-PDSO-F2
Reach Compliance Code	compliant
Other features	FREE WHEELING DIODE
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JESD-30 code	R-PDSO-F2
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	1 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Maximum repetitive peak reverse voltage	400 V
Maximum reverse recovery time	0.05 µs
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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