H01N60SA datasheet, PDF - EEWORLD Datasheet

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H01N60SA: Description600V 1A N-channel power field effect transistor; CategoryDiscrete semiconductor; File Size162KB，6 Pages; ManufacturerHI-SINCERITY MICROELECTRONICS CORP.

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H01N60SA Overview

600V 1A N-channel power field effect transistor

Features

Product Name: 600V 1A N-channel power field effect transistor

N-Channel Power Field Effect Transistor

Product model: H01N60SA

Product Description:

The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients.

product features:

1A,600V,RDS(ON)=12Ω@VGS=10V

Low Gate Charge 15nC(Typ.)

Low Crss 4pF(Typ.)

Fast Switching

Improved dv/dt Capability

parameter:

Channel: N

VDSS voltage: 600V

ID Current: 1A

VGS start voltage: ±30V

RDS (on) Max. on-resistance: 12ohm

RDS(on) @VGS : 10V

RDS(on) @ID：0.6A

ROSH: PF (lead-free)

Package：TO-92

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HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : MOS200501

Issued Date : 2005.01.01

Revised Date : 2010.11.10

Page No. : 1/6

H01N60S Series

N-Channel Power Field Effect Transistor

H01N60S Series Pin Assignment

3-Lead Plastic

TO-92

Package Code: A

Pin 1: Gate

Pin 2: Drain

Pin 3: Source

Tab

Description

This high voltage MOSFET uses an advanced termination scheme to

provide enhanced voltage-blocking capability without degratding

performance over time. In addition, this advanced MOSFET is designed

to withstand high energy in avalanche and commutation modes. The new

energy efficient design also offers a drain-to-source diode with a fast

recovery time. Designed for high voltage, high speed switching

applications in power supplies, converters and PWM motor controls,

these devices are particularly well suited for bridge circuits where diode

speed and commutating safe operating areas are critical and offer

additional and saafety margin against unexpected voltage transients.

3-Lead Plastic

TO-252

Package Code: J

Pin 1: Gate

Pin 2 & Tab: Drain

Pin 3: Source

Tab

3-Lead Plastic

TO-251

Package Code: I

Pin 1: Gate

Pin 2 & Tab: Drain

Pin 3: Source

Features

•

1A, 600V, R

DS(on)

=12Ω@V

=10V

•

Low Gate Charge 15nC(Typ.)

•

Low C

rss

4pF(Typ.)

•

Fast Switching

•

Improved d

Capability

H01N60S Series

Symbol:

Absolute Maximum Ratings

Symbol

DSS

dv/dt

, T

stg

Drain-Source Voltage

Drain Current (Continuous T

=25

Drain Current (Continuous T

=100

Drain Current (Pulsed)

Gate-Source Voltage

Single Pulse Avalanche Energy

(L=59mH, I

=1.1A, V

=50V, R

=25Ω, Starting T

=25°C)

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Total Power Dissipation (T

=25

Total Power Dissipation (T

=25

Derate above 25°C

Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering Purposes, 1/8”

from case for 5 seconds

0.22

-55 to +150

300

Parameter

H01N60SA

H01N60SI /

H01N60SJ

0.6

±30

2.8

4.5

2.5

Units

V/nS

W/°C

°C

600

*1: Repetitive Rating : Pulse width limited by maximum junction temperature

*2: I

≤1.1A,

di/dt≤200A/us, V

≤BV

DSS

, Starting TJ=25 C

H01N60SI, H01N60SJ

HSMC Product Specification

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