GQZJ3.3 datasheet, PDF - EEWORLD Datasheet

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GQZJ3.3: Description56.5 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE; Categorysemiconductor Discrete semiconductor; File Size77KB，4 Pages; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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56.5 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE

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DATA SHEET

GQZJ2.0~GQZJ56

SURFACE MOUNT ZENER DIODES

VOLTAGE

2.0 to 56 Volts

POWER

500 mWatts

QUADRO-MELF

Unit : inch (mm)

FEATURES

• Planar Die construction

• 500mW Power Dissipation

• Ideally Suited for Automated Assembly Processes

)

MECHANICAL DATA

• Case: Molded Glass QUARDRO-MELF

• Terminals: Solderable per MIL-STD-202E, Method 208

• Polarity: See Diagram Below

• Approx. Weight: 0.03 grams

• Mounting Position: Any

• Packing information

T/R - 2.5K per 7" plastic Reel

.020(0.5)

.012(0.3)

.146(3.7)

.130(3.3)

.020(0.5)

.012(0.3)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Parameter

Power Dissipation at Tamb = 25

Junction Temperature

Storage Temperature Range

Symbol

Value

500

175

-65 to +175

Units

TOT

Valid provided that leads at a distance of 10mm from case are kept at ambient temperature.

Parameter

Thermal Resi stance Juncti on to Ambi ent Ai r

Forward Voltage at IF = 100mA

Symbol

Mi n.

Typ.

Max.

0.3

Uni ts

K/mW

RthA

Vali d provi ded that leads at a di stance of 10mm from case are kept at ambi ent temperature.

STAD-JAN.27.2004

.063(1.6)

.055(1.4)DIA.

PAGE . 1

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