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GLZ51T/R13

Description
Zener Diode, 51V V(Z), 5.88%, 0.5W, Silicon, Unidirectional, ROHS COMPLIANT, GLASS, LL-34, MINIMELF-2
CategoryDiscrete semiconductor    diode   
File Size120KB,6 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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GLZ51T/R13 Overview

Zener Diode, 51V V(Z), 5.88%, 0.5W, Silicon, Unidirectional, ROHS COMPLIANT, GLASS, LL-34, MINIMELF-2

GLZ51T/R13 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerPANJIT
Parts packaging codeMELF
package instructionO-LELF-R2
Contacts2
Reach Compliance Codecompliant
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
Maximum dynamic impedance110 Ω
JESD-30 codeO-LELF-R2
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-55 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation0.5 W
Certification statusNot Qualified
Nominal reference voltage51 V
surface mountYES
technologyZENER
Terminal formWRAP AROUND
Terminal locationEND
Maximum time at peak reflow temperatureNOT SPECIFIED
Maximum voltage tolerance5.88%
Working test current5 mA
Base Number Matches1

GLZ51T/R13 Preview

Download Datasheet
GLZ2.0 SERIES
SURFACE MOUNT ZENER DIODES
VOLTAGE
2.0 to 56 Volts
POWER
500 mWatts
FEATURES
• Planar Die construction
• 500mW Power Dissipation
• Ideally Suited for Automated Assembly Processes
0.055(1.4)DIA.
• Lead free in comply with EU RoHS 2002/95/EC directives
0.063(1.6)
0.020(0.5)
0.012(0.3)
0.146(3.7)
0.130(3.3)
MECHANICAL DATA
• Case: Molded Glass MINI-MELF
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight: 0.001 ounces, 0.03 grams.
• Mounting Position: Any
• Polarity : Color band denotes cathode end
• Packing information
T/R - 2.5K per 7" plastic Reel
T/R - 10K per 13" plastic Reel
0.020(0.5)
0.012(0.3)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Parameter
Power Dissipation at T
A
= 25
O
C
Junction Temperature Range
Storage Temperature Range
Symbol
Value
500
-55 to + 175
-65 to + 175
Units
mW
O
P
TOT
T
J
T
STG
C
C
O
Valid provided that leads at a distance of 10mm from case are kept at ambient temperature.
Parameter
Thermal Resistance Junction to Ambient Air
Forward Voltage at I
F
= 100mA
Symbol
Min.
--
--
Typ.
Max.
0.3
1
o
Units
C/mW
V
R
Θ
JA
V
F
--
--
Valid provided that leads at a distance of 10mm from case are kept at ambient temperature.
November 25,2011-REV.04
PAGE . 1
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