GLZ3.3B_R1_10001 datasheet, PDF

GLZ3.3B_R1_10001: DescriptionMaximum power: 500mW Accuracy: - Reverse leakage current: 20uA @ 1V Regulated voltage value (typical value): 3.3V; CategoryDiscrete semiconductor diode; File Size315KB，7 Pages; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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GLZ3.3B_R1_10001 Overview

Maximum power: 500mW Accuracy: - Reverse leakage current: 20uA @ 1V Regulated voltage value (typical value): 3.3V

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	PANJIT
package instruction	O-LELF-R2
Reach Compliance Code	compliant
ECCN code	EAR99
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	ZENER DIODE
Maximum dynamic impedance	70 Ω
Maximum forward voltage (VF)	1 V
JESD-30 code	O-LELF-R2
Maximum knee impedance	1000 Ω
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Minimum operating temperature	-55 °C
Package body material	GLASS
Package shape	RECTANGULAR
Package form	LONG FORM
polarity	UNIDIRECTIONAL
Maximum power dissipation	0.5 W
Nominal reference voltage	3.3 V
Maximum reverse current	20 µA
Reverse test voltage	1 V
surface mount	YES
technology	ZENER
Terminal form	WRAP AROUND
Terminal location	END
Maximum voltage tolerance	6.97%
Working test current	20 mA
Base Number Matches	1

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