GBU8J datasheet, PDF - EEWORLD Datasheet

GBU8J: Description6 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE; CategoryDiscrete semiconductor diode; File Size46KB，2 Pages; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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6 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE

6 A, 600 V, 硅, 桥式整流二极管

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	PANJIT
Reach Compliance Code	compliant
Configuration	BRIDGE, 4 ELEMENTS
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1 V
Maximum non-repetitive peak forward current	200 A
Number of components	4
Maximum operating temperature	150 °C
Maximum output current	8 A
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum repetitive peak reverse voltage	600 V
surface mount	NO
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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