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GBU4M_B0_00001

Description
Bridge Rectifier Diode,
CategoryDiscrete semiconductor    diode   
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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GBU4M_B0_00001 Overview

Bridge Rectifier Diode,

GBU4M_B0_00001 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPANJIT
package instructionR-PSFM-T4
Reach Compliance Codenot_compliant
ECCN codeEAR99
Other featuresUL RECOGNIZED
Minimum breakdown voltage1000 V
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
JESD-30 codeR-PSFM-T4
Maximum non-repetitive peak forward current150 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current4 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage1000 V
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED

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Download Datasheet
...GBU4G~GBU4M
SILICON BRIDGE RECTIFIERS
VOLTAGE
400 to 1000 Volts
FEATURES
UL Recognized File #E228882
•Plastic material has Underwriters Laboratory
Flammability Classification 94V-O
• Ideal for printed circuit board
• Reliable low cost construction utilizing molded plastic technique.
• lead free in compliance with EU RoHS 2011/65/EU directive
CURRENT
4 Amperes
GBU
Unit: Inch(mm)
0.085(2.16)
0.065(1.65)
0.880(22.3)
0.854(21.7)
C0.118(C3.0)
0.150(3.80)
0.133(3.40)
0.140(3.55)
0.124(3.15)
R0.069(1.75)
0.107(2.7)
0.070(1.8)
0.099(2.5)
0.082(2.1)
0.050(1.27)
0.040(1.02)
0.210(5.33)
0.190(4.83)
0.210(5.33)
0.190(4.83)
MECHANICAL DATA
• Case: GBU
•Terminals: Leads solderable per MIL-STD-750, Method 2026
• Polarity: As marked on body
• Mounting torque: 5 inch-lbs. Max.
• Weight: 4g
0.210(5.33)
0.190(4.83)
0.024(0.6)
0.015(0.4)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25°
Cambient temperature unless otherwise specified.
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current,8.3 ms single half
sine-wave
Rating of fusing ( t<8.3ms) (Note1)
Maximum instantaneous forward
voltage per diode
IF= 2 A
IF= 4 A
Maximum reverse current
@ rated VR
TJ=25°
C
TJ=125°
C
SYMBOL
V
RRM
V
RMS
V
DC
GBU
4G
400
280
400
GBU
4J
600
420
600
4
150
93
1.0
1.1
5
500
C
J
R
θJA
R
θJC
T
J
T
STG
39
22
4
- 55 to +150
- 55 to +150
pF
°
C/W
°
C
°
C
GBU
4K
800
560
800
GBU
4M
1000
700
1000
UNIT
V
V
V
A
A
I
F(AV)
I
FSM
I t
V
F
2
A s
V
I
R
μA
Typical junction capacitance (Note 2)
Typical thermal resistance
(Note 3)
(Note 4)
Operating junction temperature range
Storage temperature range
Note 1: Non-repetitive, for t>1ms and<8.3ms.
Note 2: Measured at 1MHz and applied Reverse bias of 4.0V DC
Note 3: Products installed on the PCB, Without heatsink。
Note 4: Products installed on aluminum plate heatsink。
Dec 30,2016-REV.09
Page 1
0.729(18.5)
0.689(17.5)
0.052(1.3)
0.035(0.9)
0.400(10.1)
0.389(9.9)
0.740(18.8)
0.716(18.2)
2
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